是否Rohs认证: | 不符合 | 生命周期: | Obsolete |
包装说明: | SMALL OUTLINE, R-PSSO-G2 | 针数: | 3 |
Reach Compliance Code: | unknown | ECCN代码: | EAR99 |
HTS代码: | 8541.29.00.75 | 风险等级: | 5.82 |
最大集电极电流 (IC): | 2 A | 集电极-发射极最大电压: | 50 V |
配置: | SINGLE | 最小直流电流增益 (hFE): | 70 |
JESD-30 代码: | R-PSSO-G2 | JESD-609代码: | e0 |
元件数量: | 1 | 端子数量: | 2 |
最高工作温度: | 150 °C | 封装主体材料: | PLASTIC/EPOXY |
封装形状: | RECTANGULAR | 封装形式: | SMALL OUTLINE |
峰值回流温度(摄氏度): | NOT SPECIFIED | 极性/信道类型: | NPN |
最大功率耗散 (Abs): | 1 W | 认证状态: | Not Qualified |
子类别: | Other Transistors | 表面贴装: | YES |
端子面层: | Tin/Lead (Sn/Pb) | 端子形式: | GULL WING |
端子位置: | SINGLE | 处于峰值回流温度下的最长时间: | NOT SPECIFIED |
晶体管应用: | AMPLIFIER | 晶体管元件材料: | SILICON |
标称过渡频率 (fT): | 100 MHz | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
FJD3076TM | FAIRCHILD |
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Power Amplifier Applications | |
FJD3076TM | ONSEMI |
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NPN外延硅晶体管 | |
FJD3076Y | FAIRCHILD |
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Small Signal Bipolar Transistor, 2A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon, DPAK-3 | |
FJD3305H1 | FAIRCHILD |
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NPN Silicon Transistor | |
FJD3305H1_12 | FAIRCHILD |
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NPN Silicon Transistor | |
FJD3305H1TM | FAIRCHILD |
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NPN Silicon Transistor | |
FJD3305H1TM | ONSEMI |
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NPN 硅晶体管 | |
FJD5304D | FAIRCHILD |
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High Voltage Fast Switching Transistor | |
FJD5304D_10 | FAIRCHILD |
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High Voltage Fast Switching Transistor | |
FJD5304DTF | FAIRCHILD |
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High Voltage Fast Switching Transistor |