Datasheet > FJD5555

FJD5555

更新时间： 2024-09-19 03:36:55

品牌	Logo	应用领域
飞兆/仙童 - FAIRCHILD		晶体晶体管
页数	文件大小	规格书
5页	179K
描述
NPN Silicon Transistor

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FJD5555 数据手册

April 2008

FJD5555

NPN Silicon Transistor

High Voltage Switch Mode Application

•

Fast Speed Switching

Wide Safe Operating Area

Suitable for Electronic Ballast Application

DPAK

Marking : J5555

1. Base 2. Collector 3. Emitter

Absolute Maximum Ratings * T_C=25°C unless otherwise noted

Symbol

BV_CBO

BV_CEO

BV_EBO

I_C

Parameter

Value

Units

Collector-Base Voltage

1050

Collector-Emitter Voltage

Emitter-Base Voltage

400

Collector Current (DC)

Collector Current (Pulse)

Base Current (DC)

I_CP

I_B

I_BP

Collector Current (Pulse)

Collector Dissipation.

P_C

1.34

°C

T_J

Junction Temperature

150

T_STG

Storage Junction Temperature Range

- 55 ~ 150

* These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.

Thermal Characteristics T_a=25°C unless otherwise noted

Symbol

Parameter

Value

Units

R_θJA

Thermal Resistance, Junction to Ambient

°C/W

* Device mounted on minimum pad size

Package Marking and Ordering Information

Part Number

Marking

Package

Packing Method

Remarks

FJD5555TM

J5555

D-PAK

Tape & Reel

FJD5555 Rev. A2

www.fairchildsemi.com

12 3 4 5

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