Datasheet > FJD3305H1_12

FJD3305H1_12

更新时间： 2022-04-07 13:35:02

品牌	Logo	应用领域
飞兆/仙童 - FAIRCHILD		晶体晶体管
页数	文件大小	规格书
6页	182K
描述
NPN Silicon Transistor

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FJD3305H1_12 数据手册

April 2012

FJD3305H1

NPN Silicon Transistor

Features

• High Voltage Switch Mode Application

• Fast Speed Switching

• Wide Safe Operating Area

• Suitable for Electronic Ballast Application

• Wave Soldering

DPAK

1. Base 2. Collector 3. Emitter

Absolute Maximum Ratings* T_C= 25°C unless otherwise noted

Symbol

V_CBO

V_CEO

V_EBO

I_C

Parameter

Value

Units

Collector-Base Voltage

700

400

Collector-Emitter Voltage

Emitter-Base Voltage

Collector Current (DC)

Collector Current (Pulse)

Base Current

I_CP

I_B

P_C

Collector Dissipation, T_a= 25°C

T_c= 25°C

1.1

T_J

Junction Temperature

Storage Temperature

150

°C

T_STG

-65 to 150

* These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.

Thermal Characteristics T_a= 25°C unless otherwise noted

Symbol

R_θJA

R_θJC

Parameter

Thermal Resistance, Junction to Ambient

Thermal Resistance, Junction to Case

Value

110

Units

°C/W

2.0

* Device mounted on minimum pad size

Ordering Information

Part Number

FJD3305H1TM

Marking

J3305H1

Package

D-PAK

Packing Method

Tape & Reel

Remarks

FJD3305H1 Rev. A1

www.fairchildsemi.com

12 3 4 5 6

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