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FJD5304D PDF预览

FJD5304D

更新时间: 2024-10-27 22:31:59
品牌 Logo 应用领域
飞兆/仙童 - FAIRCHILD 晶体开关晶体管高压
页数 文件大小 规格书
6页 178K
描述
High Voltage Fast Switching Transistor

FJD5304D 数据手册

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FJD5304D  
High Voltage Fast Switching Transistor  
Features  
Built-in Free Wheeling Diode  
Wide Safe Operating Area  
Small Variance in Storage Time  
Suitable for Electronic Ballast Application  
Equivalent Circuit  
C
B
D-PACK  
1. Base 2. Collector 3. Emitter  
1
E
Absolute Maximum Ratings  
T = 25°C unless otherwise noted  
C
Symbol  
VCBO  
Parameter  
Collector-Base Voltage  
Value  
700  
Units  
V
VCEO  
VEBO  
IC  
Collector-Emitter Voltage  
Emitter-Base Voltage  
400  
V
12  
V
Collector Current (DC)  
* Collector Current (Pulse)  
Base Current (DC)  
4
A
ICP  
IB  
8
A
2
4
A
IBP  
* Base Current (Pulse)  
Collector Dissipation (TC = 25°C)  
Junction Temperature  
Storage Temperature  
A
PC  
30  
W
°C  
°C  
TJ  
150  
TSTG  
-55 ~ 150  
* Pulse Test: PW = 300µs, Duty Cycle = 2% Pulsed  
Package Marking and Ordering Information  
Device Marking  
J5304D  
Device  
FJD5304DTM  
Package  
D-PAK  
Reel Size  
13” Dia  
Tape Width  
Quantity  
2500  
-
J5304D  
FJD5304DTF  
D-PAK  
13” Dia  
-
2000  
©2005 Fairchild Semiconductor Corporation  
FJD5304D Rev. A  
1
www.fairchildsemi.com  

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