Datasheet > FJC1963_05

FJC1963_05

更新时间： 2022-04-23 23:00:11

品牌	Logo	应用领域
飞兆/仙童 - FAIRCHILD		晶体晶体管
页数	文件大小	规格书
5页	436K
描述
NPN Epitaxial Silicon Transistor

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数据手册

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FJC1963_05 数据手册

Typical Performance Characteristics

Figure 1. Static Characteristic

Figure 2. DC Current Gain

1400

1000

I_B= 7mA

1200

V_CE= 2V

I_B= 6mA

1000

Ta = 125^oC

I_B= 5mA

800

I_B= 4mA

Ta = 25^oC

100

600

Ta = - 40^oC

I_B= 3mA

400

I_B= 2mA

200

I_B= 1mA

10m

100m

V_CE[V], COLLECTOR-EMITTER VOLTAGE

I_C[A], COLLECTOR CURRENT

Figure 3. Collector-Emitter Saturation Voltage

Figure 4. Base-Emitter Saturation Voltage

I_C= 10I_B

Ta = 125^oC

Ta = - 40^oC

100m

Ta = 25^oC

Ta = 125^oC

Ta = - 40^oC

10m

100m

10m

100m

10m

100m

I_C[A], COLLECTOR CURRENT

Figure 5. Base-Emitter On Voltage

Figure 6. Power Derating

0.7

0.6

0.5

0.4

0.3

0.2

0.1

0.0

1.8

1.6

1.4

1.2

1.0

0.8

0.6

0.4

V_CE= 2V

125^oC

25^oC

- 40^oC

0.2

0.0

0.2

0.4

0.6

0.8

1.0

1.2

1.4

100

125

150

175

V_BE[V], BASE-EMITTER VOLTAGE

T_a[^oC], AMIBIENT TEMPERATURE

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FJC1963 Rev. B1

1 234 5

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