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FJC2383Y PDF预览

FJC2383Y

更新时间: 2024-02-26 12:32:19
品牌 Logo 应用领域
飞兆/仙童 - FAIRCHILD 晶体小信号双极晶体管电视放大器
页数 文件大小 规格书
6页 437K
描述
Small Signal Bipolar Transistor, 1A I(C), 160V V(BR)CEO, 1-Element, NPN, Silicon, LEAD FREE, SOT-89, 3 PIN

FJC2383Y 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Obsolete零件包装代码:SOT-89
包装说明:SMALL OUTLINE, R-PSSO-F3针数:3
Reach Compliance Code:unknownECCN代码:EAR99
HTS代码:8541.21.00.95风险等级:5.73
最大集电极电流 (IC):1 A集电极-发射极最大电压:160 V
配置:SINGLE最小直流电流增益 (hFE):160
JESD-30 代码:R-PSSO-F3JESD-609代码:e3
湿度敏感等级:1元件数量:1
端子数量:3最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):260
极性/信道类型:NPN最大功率耗散 (Abs):0.5 W
认证状态:Not Qualified子类别:Other Transistors
表面贴装:YES端子面层:Matte Tin (Sn)
端子形式:FLAT端子位置:SINGLE
处于峰值回流温度下的最长时间:NOT SPECIFIED晶体管应用:AMPLIFIER
晶体管元件材料:SILICON标称过渡频率 (fT):100 MHz
Base Number Matches:1

FJC2383Y 数据手册

 浏览型号FJC2383Y的Datasheet PDF文件第2页浏览型号FJC2383Y的Datasheet PDF文件第3页浏览型号FJC2383Y的Datasheet PDF文件第4页浏览型号FJC2383Y的Datasheet PDF文件第5页浏览型号FJC2383Y的Datasheet PDF文件第6页 
July 2005  
FJC2383  
NPN Epitaxial Silicon Transistor  
Color TV Audio Output & Color TV Vertical Deflection Output  
Marking  
2 3  
P Y  
8 3  
W W  
SOT-89  
1
Weekly code  
Year code  
hFE grage  
1. Base 2. Collector 3. Emitter  
Absolute Maximum Ratings Ta = 25°C unless otherwise noted  
Symbol  
Parameter  
Ratings  
Units  
VCBO  
Collector-Base Voltage  
Collector-Emitter Voltage  
Emitter-Base Voltage  
Collector Current  
160  
V
VCEO  
VEBO  
IC  
160  
V
6
V
1
A
IB  
Base Current  
0.5  
A
PC  
Collector Power Dissipation  
Junction Temperature  
Storage Temperature  
500  
mW  
°C  
°C  
TJ  
150  
-55 ~ 150  
TSTG  
Electrical Characteristics Ta = 25°C unless otherwise noted  
Symbol  
Parameter  
Test Condition  
Min.  
Typ.  
Max.  
1
1
Units  
ICBO  
Collector Cut-off Current  
VCB = 150V, IE = 0  
µA  
µA  
V
IEBO  
Emitter Cut-off Current  
VEB = 6V, IC = 0  
BVCEO  
hFE  
Collector-Emitter Breakdown Voltage  
DC Current Gain  
IC = 10mA, IB = 0  
160  
100  
VCE = 5V, IC = 200mA  
IC = 500mA, IB = 50mA  
VCE = 5V, IC = 5mA  
VCE = 5V, IC = 200mA  
320  
1.5  
V
V
CE (sat)  
BE (on)  
Collector-Emitter Saturation Voltage  
Base-Emitter On Voltage  
Current Gain Bandwidth Product  
Output Capacitance  
V
V
0.45  
20  
0.75  
fT  
100  
MHz  
pF  
Cob  
VCB = 10V, IE = 0, f = 1MHz  
20  
©2005 Fairchild Semiconductor Corporation  
FJC2383 Rev. B  
1
www.fairchildsemi.com  

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