Datasheet > FJC790_05

FJC790_05

更新时间： 2022-04-23 23:00:11

品牌	Logo	应用领域
飞兆/仙童 - FAIRCHILD		晶体晶体管
页数	文件大小	规格书
4页	46K
描述
PNP Epitaxial Silicon Transistor

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数据手册

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FJC790_05 数据手册

September 2005

FJC790

PNP Epitaxial Silicon Transistor

Camera Strobe Flash Application

•

Complement to FJC690

High Collector Current

Low Collector-Emitter Saturation Voltage

Marking

7 9

W W

SOT-89

Weekly code

Year code

h_FE

1. Base 2. Collector 3. Emitter

Absolute Maximum Ratings T_a= 25°C unless otherwise noted

Symbol

Parameter

Value

Units

V_CBO

Collector-Base Voltage

-50

-40

V_CEO

V_EBO

I_C

Collector-Emitter Voltage

Emitter-Base Voltage

Collector Current (DC)

Power Dissipation

-5

-2

P_C

0.5

°C

T_J

Junction Temperature

Storage Temperature

150

T_STG

- 55 ~ 150

Electrical Characteristics T_a= 25°C unless otherwise noted

Symbol

BV_CBO

BV_CEO

BV_EBO

I_CEO

Parameter

Collector-Base Breakdown Voltage

Collector-Emitter Breakdown Voltage

Emitter-Base Breakdown Voltage

Collector Cut-off Current

Test Condition

Min.

-50

-40

-5

Typ.

Max.

Units

I_C= -100µA, I_E= 0

I_C= -10mA, I_B= 0

I_E= -100µA, I_C= 0

V_CE= -35V, V_B= 0

V_EB= -4V, I_C= 0

-0.1

800

µA

I_EBO

Emitter Cut-off Current

h_FE

DC Current Gain

V_CE= -2V, I_C= -10mA

300

250

200

150

_CE= -2V, I_C= -500mA

_CE= -2V, I_C= -1A

_CE= -2V, I_C= -2A

_CE(sat)

Collector-Emitter Saturation Voltage

I_C= -0.5A, I_B= -5mA

-250

-350

-450

_C= -1A, I_B= -10mA

_C= -2A, I_B= -50mA

_BE(sat)

_BE(on)

Base-Emitter Saturation Voltage

Base-Emitter On Voltage

I_C= -1A, I_B= -10mA

V_CE= -2V, I_C= 1A

-0.9

-0.8

C_OB

Collector Output Capacitance

V_CB= -10V, I_E= 0, f = 1MHz

FJC790 Rev. C

www.fairchildsemi.com

12 3 4

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