FJC1308P

更新时间： 2024-01-07 04:33:55

品牌	Logo	应用领域
飞兆/仙童 - FAIRCHILD		晶体晶体管
页数	文件大小	规格书
4页	53K
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FJC1308P 数据手册

FJC1308

Audio Power Amplifier Applications

•

Complement to FJC1963

High Collector Current

Low Collector-Emitter Saturation Voltage

SOT-89

1. Base 2. Collector 3. Emitter

PNP Epitaxial Silicon Transistor

Absolute Maximum Ratings ^{T =25°C unless otherwise noted}

Symbol

Parameter

Value

-30

Units

Collector-Base Voltage

CBO

Collector-Emitter Voltage

Emitter-Base Voltage

Collector Current (DC)

-30

CEO

EBO

-6

-3

Power Dissipation(T =25°C)

0.5

Junction Temperature

Storage Temperature

150

°C

- 55 ~ 150

STG

Electrical Characteristics ^{T =25°C unless otherwise noted}

Symbol

Parameter

Test Condition

Min.

-30

-6

Typ.

Max.

Units

Collector-Base Breakdown Voltage

Collector-Emitter Breakdown Voltage

Emitter-Base Breakdown Voltage

Collector Cut-off Current

I =-50µA, I =0

CBO

CEO

EBO

I =-1mA, I =0

I =-50µA, I =0

=-20V, V =0

-0.5

390

µA

CEO

EBO

Emitter Cut-off Current

=-5V, I =0

DC Current Gain

=-2V, I =-0.5A

(sat)

Collector-Emitter Saturation Voltage

Base-Emitter Saturation Voltage

I =-1.5, I =-0.15A

-0.45

-1.5

I =-1.5, I =-0.15A

Classification

80 ~ 180

120 ~ 270

180 ~ 390

Marking

FBP

grade

Rev. A1, August 2002

12 3 4

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