Datasheet > FJC1308_05

FJC1308_05

更新时间： 2024-11-06 03:36:55

品牌	Logo	应用领域
飞兆/仙童 - FAIRCHILD		晶体晶体管
页数	文件大小	规格书
5页	441K
描述
PNP Epitaxial Silicon Transistor

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中文翻译

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数据手册

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FJC1308_05 数据手册

July 2005

FJC1308

PNP Epitaxial Silicon Transistor

Audio Power Amplifier Applications

•

Complement to FJC1963

High Collector Current

Low Collector-Emitter Saturation Voltage

Marking

1 3

P Y

0 8

W W

SOT-89

Weekly code

1. Base 2. Collector 3. Emitter

Year code

h_FEgrage

Absolute Maximum Ratings T_C= 25°C unless otherwise noted

Symbol

V_CBO

Parameter

Collector-Base Voltage

Value

-30

Units

V_CEO

V_EBO

I_C

Collector-Emitter Voltage

Emitter-Base Voltage

-30

-6

Collector Current (DC)

Power Dissipation(T_C=25°C)

Junction Temperature

Storage Temperature

-3

P_C

0.5

°C

T_J

150

T_STG

- 55 ~ 150

Electrical Characteristics T_C= 25°C unless otherwise noted

Symbol

BV_CBO

BV_CEO

BV_EBO

I_CEO

Parameter

Collector-Base Breakdown Voltage

Collector-Emitter Breakdown Voltage

Emitter-Base Breakdown Voltage

Collector Cut-off Current

Test Condition

Min.

Max.

Units

I_C= -50µA, I_E= 0

-30

-6

I_C= -1mA, I_B= 0

I_E= -50µA, I_C= 0

V_CE= -20V, V_B= 0

V_EB= -5V, I_C= 0

-0.5

390

µA

I_EBO

Emitter Cut-off Current

h_FE

DC Current Gain

V_CE= -2V, I_C= -0.5A

I_C=-1.5, I_B= -0.15A

I_C= -1.5, I_B= -0.15A

_CE(sat)

_BE(sat)

Collector-Emitter Saturation Voltage

Base-Emitter Saturation Voltage

-0.45

-1.5

FJC1308 Rev. B1

www.fairchildsemi.com

12 3 4 5

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