Datasheet > FJB5555

FJB5555

更新时间： 2024-09-16 12:23:39

品牌	Logo	应用领域
飞兆/仙童 - FAIRCHILD		晶体晶体管
页数	文件大小	规格书
6页	154K
描述
NPN Silicon Transistor

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FJB5555 数据手册

February 2012

FJB5555

NPN Silicon Transistor

Features

• High Voltage Switch Mode Application

• Fast Speed Switching

• Wide Safe Operating Area

• Suitable for Electronic Ballast Application

D²-PAK

1.Base 2.Collector 3.Emitter

Absolute Maximum Ratings* T_a= 25°C unless otherwise noted

Symbol

BV_CBO

BV_CEO

BV_EBO

I_C

Parameter

Collector-Base Voltage

Value

Units

1050

Collector-Emitter Voltage

Emitter-Base Voltage

400

Collector Current (DC)

Collector Current (Pulse)

Base Current (DC)

I_CP

I_B

I_BP

Collector Current (Pulse)

Junction Temperature

T_J

150

°C

T_STG

Storage Junction Temperature Range

- 55 to 150

* These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.

Thermal Characteristics T_a= 25°C unless otherwise noted

Symbol

Parameter

Value

Units

Total Device Dissipation

T_a= 25°C

T_c= 25°C

1.6

100

P_D

R_θja

R_θjc

Thermal Resistance, Junction to Ambient

Thermal Resistance, Junction to Case

77.75

1.25

°C/W

* Device mounted on minimum pad size

Ordering Information

Part Number

Marking

Package

Packing Method

Tape & Reel

Remarks

FJB5555TM

J5555

D2-PAK

FJB5555 Rev. A0

www.fairchildsemi.com

12 3 4 5 6

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