Datasheet > FFSH1665A

FFSH1665A

更新时间： 2024-10-29 11:15:35

品牌	Logo	应用领域
安森美 - ONSEMI		二极管
页数	文件大小	规格书
7页	347K
描述
SiC 二极管 - 650V，16A

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FFSH1665A 数据手册

DATA SHEET

www.onsemi.com

Silicon Carbide (SiC)

Schottky Diode – EliteSiC,

16 A, 650 V, D1, TO-247-2L

RRM

650 V

16 A

FFSH1665A

Description

Silicon Carbide (SiC) Schottky Diodes use a completely new

technology that provides superior switching performance and higher

reliability compared to Silicon. No reverse recovery current,

temperature independent switching characteristics, and excellent

thermal performance sets Silicon Carbide as the next generation of

power semiconductor. System benefits include highest efficiency,

faster operating frequency, increased power density, reduced EMI, and

reduced system size and cost.

1. Cathode

2. Anode

Features

TO−247−2LD

CASE 340CL

• Max Junction Temperature 175°C

• Avalanche Rated 81 mJ

• High Surge Current Capacity

• Positive Temperature Coefficient

• Ease of Paralleling

• No Reverse Recovery / No Forward Recovery

• This Device is Pb−Free and is RoHS Compliant

MARKING DIAGRAM

FFSH

1665A

AYWWZZ

Applications

• General Purpose

• SMPS, Solar Inverter, UPS

• Power Switching Circuits

FFSH1665A

= Specific Device Code

= Assembly Site

YWW

= Date Code (Year & Week)

= Lot Code

ORDERING INFORMATION

See detailed ordering and shipping information on page 2 of

this data sheet.

Publication Order Number:

January, 2023 − Rev. 2

FFSH1665A/D

12 3 4 5 6 7

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