Datasheet > FFSH4065BDN

FFSH4065BDN

更新时间： 2024-10-29 17:15:23

品牌	Logo	应用领域
安森美 - ONSEMI		/
页数	文件大小	规格书
6页	249K
描述
Silicon Carbide (SiC) Schottky Diode -?EliteSiC, 40A, 650V, D2, TO-247-3L

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FFSH4065BDN 数据手册

DATA SHEET

www.onsemi.com

Silicon Carbide (SiC)

Schottky Diode – EliteSiC,

40 A, 650 V, D2, TO-247-3L

Anode

Cathode/

Case

Anode

FFSH4065BDN

Schottky Diode

Description

Silicon Carbide (SiC) Schottky Diodes use a completely new

technology that provides superior switching performance and higher

reliability compared to Silicon. No reverse recovery current,

temperature independent switching characteristics, and excellent

thermal performance sets Silicon Carbide as the next generation of

power semiconductor. System benefits include highest efficiency,

faster operating frequency, increased power density, reduced EMI, and

reduced system size & cost.

TO−247−3LD

CASE 340CX

Features

• Max Junction Temperature 175°C

• Avalanche Rated 94 mJ

MARKING DIAGRAM

• High Surge Current Capacity

• Positive Temperature Coefficient

• Ease of Paralleling

• No Reverse Recovery/No Forward Recovery

AYWWKK

FFSH

4065BDN

• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS

Compliant

Applications

• General Purpose

• SMPS, Solar Inverters, UPS

• Power Switching Circuit

= Assembly Plant Code

YWW

FFSH4065BDN

= Date Code (Year & Week)

= Lot Traceability Code

= Specific Device Code

ORDERING INFORMATION

See detailed ordering and shipping information on page 2 of

this data sheet.

Publication Order Number:

February, 2024 − Rev. 0

FFSH4065BDN/D

12 3 4 5 6

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