Datasheet > FFSH4065ADN-F155

FFSH4065ADN-F155

更新时间： 2024-10-29 11:13:55

品牌	Logo	应用领域
安森美 - ONSEMI		二极管
页数	文件大小	规格书
7页	319K
描述
SiC 二极管，650V，40A，TO-247-3，共阴极

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FFSH4065ADN-F155 数据手册

DATA SHEET

www.onsemi.com

Silicon Carbide (SiC)

Schottky Diode – EliteSiC,

40 A, 650 V, D1, TO-247-3L

FFSH4065ADN-F155

Description

TO−247−3LD

CASE 340CH

Silicon Carbide (SiC) Schottky Diodes use a completely new

technology that provides superior switching performance and higher

reliability compared to Silicon. No reverse recovery current,

temperature independent switching characteristics, and excellent

thermal performance sets Silicon Carbide as the next generation of

power semiconductor. System benefits include highest efficiency,

faster operating frequency, increased power density, reduced EMI, and

reduced system size & cost.

RRM

650 V

40 A

Features

• Max Junction Temperature 175°C

• Avalanche Rated 95 mJ

• High Surge Current Capacity

• Positive Temperature Coefficient

• Ease of Paralleling

MARKING DIAGRAM

• No Reverse Recovery / No Forward Recovery

• This Device is Pb−Free and is RoHS Compliant

AYWWKK

FFSH

Applications

• General Purpose

• SMPS, Solar Inverter, UPS

• Power Switching Circuits

4065ADN

YWW

= Assembly Plant Code

= Date Code (Year & Week)

= Lot Traceability Code

= Specific Device Code

FFSH4065ADN

ORDERING INFORMATION

See detailed ordering and shipping information on page 2 of

this data sheet.

Publication Order Number:

FFSH4065ADN−F155/D

February, 2023 − Rev. 2

12 3 4 5 6 7

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