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FFSM0865B PDF预览

FFSM0865B

更新时间： 2024-10-29 11:15:59
品牌 Logo 应用领域
安森美 - ONSEMI /
页数 文件大小 规格书
6页 386K
描述
Silicon Carbide (SiC) Schottky Diode – EliteSiC, 8 A, 650 V, D2, Power88

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FFSM0865B 数据手册

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DATA SHEET  
www.onsemi.com  
Silicon Carbide (SiC)  
Schottky Diode – EliteSiC,  
8ꢀA, 650 V, D2, Power88  
V
I
F
RRM  
650 V  
8.0 A  
FFSM0865B  
Silicon Carbide (SiC) Schottky Diodes use a completely new  
technology that provides superior switching performance and higher  
reliability compared to Silicon. No reverse recovery current,  
temperature independent switching characteristics, and excellent  
thermal performance sets Silicon Carbide as the next generation of  
power semiconductor. System benefits include highest efficiency,  
faster operating frequency, increased power density, reduced EMI, and  
reduced system size and cost.  
5 Cathode  
3, 4 Anode  
1, 2 Floating  
Schottky Diode  
Pin1  
5
4
3
Features  
2
1
• Max Junction Temperature 175°C  
• Avalanche Rated 33 mJ  
• High Surge Current Capacity  
• Positive Temperature Coefficient  
• Ease of Paralleling  
• No Reverse Recovery / No Forward Recovery  
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS  
Compliant  
PQFN4 8y 8, 2P  
(Power88)  
CASE 483AP  
MARKING DIAGRAM  
FFSM  
0865B  
AWLYWW  
Applications  
• General Purpose  
• SMPS, Solar Inverter, UPS  
• Power Switching Circuits  
FFSM0865B  
A
WL  
Y
WW  
= Specific Device Code  
= Assembly Site  
= Wafer Lot Number  
= Year  
MAXIMUM RATINGS (T = 25°C unless otherwise noted)  
C
Parameter  
Symbol  
Value  
650  
33  
Unit  
V
= Work Week  
Peak Repetitive Reverse Voltage  
Single Pulse Avalanche Energy (starting T  
V
RRM  
=
E
AS  
mJ  
C
25°C, I  
= 11.5 A, L = 0.5 mH, V = 50 V)  
L(pk)  
ORDERING INFORMATION  
See detailed ordering and shipping information on page 2 of  
this data sheet.  
Continuous Rectified Forward  
Current  
T
T
< 153  
< 135  
I
8.0  
11.6  
490  
434  
42  
A
A
C
C
F
Non−Repetitive Peak Forward  
T
C
= 25°C  
I
FM  
Surge Current (t = 10 ms)  
P
T
C
= 150°C  
= 25°C  
Non−Repetitive Forward Surge  
Current (Half−Sine Pulse)  
T
C
I
A
FSM  
t
= 8.3 ms  
P
Power Dissipation  
T
= 25°C  
P
tot  
91  
15  
W
C
T
C
= 150°C  
Operating Junction and Storage Temperature  
Range  
T , T  
−55 to  
+175  
°C  
J
stg  
Stresses exceeding those listed in the Maximum Ratings table may damage the  
device. If any of these limits are exceeded, device functionality should not be  
assumed, damage may occur and reliability may be affected.  
THERMAL RESISTANCE  
Parameter  
Symbol  
Value  
Unit  
Thermal Resistance, Junction−to−Case  
R
1.64  
°C/W  
q
JC  
© Semiconductor Components Industries, LLC, 2020  
1
Publication Order Number:  
January, 2023 − Rev. 2  
FFSM0865B/D  
123456

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