Datasheet > FFSM1265A

FFSM1265A

更新时间： 2024-10-29 11:12:23

品牌	Logo	应用领域
安森美 - ONSEMI		二极管
页数	文件大小	规格书
6页	356K
描述
SiC 二极管 - 650V，12A，PQFN88

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中文翻译

获取价格

技术参数
数据手册

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FFSM1265A 技术参数

是否无铅：	不含铅	生命周期：	Active
Reach Compliance Code：	not_compliant	Factory Lead Time：	26 weeks
风险等级：	1.51	二极管类型：	RECTIFIER DIODE
湿度敏感等级：	1	Base Number Matches：	1

FFSM1265A 数据手册

DATA SHEET

www.onsemi.com

Silicon Carbide (SiC)

Schottky Diode – EliteSiC,

12 A, 650 V, D1, Power88

5 Cathode

3, 4 Anode

1, 2 Floating

FFSM1265A

Schottky Diode

Description

Silicon Carbide (SiC) Schottky Diodes use a completely new

technology that provides superior switching performance and higher

reliability compared to Silicon. No reverse recovery current,

temperature independent switching characteristics, and excellent

thermal performance sets Silicon Carbide as the next generation of

power semiconductor. System benefits include highest efficiency,

faster operating frequency, increased power density, reduced EMI, and

reduced system size and cost.

Pin 1

PQFN4 8X8, 2P

(Power88)

Features

CASE 483AP

• Max Junction Temperature 175°C

• Avalanche Rated 79 mJ

• High Surge Current Capacity

• Positive Temperature Coefficient

• Ease of Paralleling

MARKING DIAGRAM

• No Reverse Recovery/No Forward Recovery

AXYYKK

FFSM

1265A

• This Device is Pb−Free, Halogen Free/BFR Free and RoHS

Compliant

Applications

• General Purpose

• SMPS, Solar Inverter, UPS

• Power Switching Circuits

XYY

= Assembly Plant Code

= Date Code (Year & Week)

= Lot Traceability Code

FFSM1265A = Specific Device Code

ORDERING INFORMATION

See detailed ordering and shipping information on page 2 of

this data sheet.

Publication Order Number:

February, 2023 − Rev. 4

FFSM1265A/D

12 3 4 5 6

中文翻译

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