Datasheet > FFSM0665A

FFSM0665A

更新时间： 2024-10-29 11:13:43

品牌	Logo	应用领域
安森美 - ONSEMI		二极管
页数	文件大小	规格书
6页	358K
描述
SiC 二极管，650V，6A，PQFN88

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中文翻译

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数据手册

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FFSM0665A 数据手册

DATA SHEET

www.onsemi.com

Silicon Carbide (SiC)

Schottky Diode – EliteSiC,

6ꢀA, 650 V, D1, Power88

Pin1

PQFN 8y 8, 2P

(Power88)

CASE 483AP

FFSM0665A

Description

Silicon Carbide (SiC) Schottky Diodes use a completely new

technology that provides superior switching performance and higher

reliability compared to Silicon. No reverse recovery current,

temperature independent switching characteristics, and excellent

thermal performance sets Silicon Carbide as the next generation of

power semiconductor. System benefits include highest efficiency,

faster operating frequency, increased power density, reduced EMI, and

reduced system size and cost.

5. Cathode 3, 4. Anode

Schottky Diode

MARKING DIAGRAM

Features

AYWWKK

FFSM

0665A

• Max Junction Temperature 175°C

• Avalanche Rated 20 mJ

• High Surge Current Capacity

• Positive Temperature Coefficient

• Ease of Paralleling

YWW

= Assembly Plant Code

= Date Code (Year & Week)

= Lot Traceability Code

= Specific Device Code

• No Reverse Recovery/No Forward Recovery

• This Device is Pb−Free, Halogen Free/BFR Free and RoHS

FFSM0665A

Compliant

Applications

• General Purpose

• SMPS, Solar Inverter, UPS

• Power Switching Circuits

ORDERING INFORMATION

See detailed ordering and shipping information on page 2 of

this data sheet.

Publication Order Number:

February, 2023 − Rev. 5

FFSM0665A/D

12 3 4 5 6

中文翻译

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