Datasheet > FFSH50120A

FFSH50120A

更新时间： 2024-10-29 11:10:43

品牌	Logo	应用领域
安森美 - ONSEMI		二极管
页数	文件大小	规格书
7页	346K
描述
SiC 二极管，1200V，50A，TO-247-2

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FFSH50120A 数据手册

DATA SHEET

www.onsemi.com

Silicon Carbide (SiC)

Schottky Diode – EliteSiC,

50 A, 1200 V, D1, TO-247-2L

1. Cathode

2. Anode

Schottky Diode

FFSH50120A

Description

Silicon Carbide (SiC) Schottky Diodes use a completely new

technology that provides superior switching performance and higher

reliability compared to Silicon. No reverse recovery current,

temperature independent switching characteristics, and excellent

thermal performance sets Silicon Carbide as the next generation of

power semiconductor. System benefits include highest efficiency,

faster operating frequency, increased power density, reduced EMI, and

reduced system size & cost.

TO−247−2LD

CASE 340CL

MARKING DIAGRAM

Features

• Max Junction Temperature 175°C

• Avalanche Rated 441 mJ

• High Surge Current Capacity

• Positive Temperature Coefficient

• Ease of Paralleling

AYWWZZ

FFSH

50120A

• No Reverse Recovery/No Forward Recovery

• This Device is Pb−Free, Halogen Free/BFR Free and RoHS

Compliant

Applications

• General Purpose

• SMPS, Solar Inverter, UPS

• Power Switching Circuits

YWW

= Assembly Plant Code

= Date Code (Year & Week)

= Lot Code

FFSH50120A

= Specific Device Code

ORDERING INFORMATION

See detailed ordering and shipping information on page 2 of

this data sheet.

Publication Order Number:

January, 2023 − Rev. 4

FFSH50120A/D

12 3 4 5 6 7

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