Datasheet > FFSH5065B-F155

FFSH5065B-F155

更新时间： 2024-10-29 17:15:31

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安森美 - ONSEMI		/
页数	文件大小	规格书
6页	272K
描述
Silicon Carbide (SiC) Schottky Diode -?EliteSiC, 50A, 650V, D2, TO-247-2L

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FFSH5065B-F155 数据手册

DATA SHEET

www.onsemi.com

Silicon Carbide (SiC)

Schottky Diode – EliteSiC,

50 A, 650 V, D2, TO-247-2L

FFSH5065B-F155

Description

TO−247−2LD

CASE 340DC

Silicon Carbide (SiC) Schottky Diodes use a completely new

technology that provides superior switching performance and higher

reliability compared to Silicon. No reverse recovery current,

temperature independent switching characteristics, and excellent

thermal performance sets Silicon Carbide as the next generation of

power semiconductor. System benefits include highest efficiency,

faster operating frequency, increased power density, reduced EMI, and

reduced system size & cost.

Anode

Cathode

Schottky Diode

MARKING DIAGRAM

Features

• Max Junction Temperature 175°C

• Avalanche Rated 225 mJ

• High Surge Current Capacity

• Positive Temperature Coefficient

• Ease of Paralleling

AYWWKK

FFSH

5065B

• No Reverse Recovery/No Forward Recovery

• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS

Compliant

Applications

• General Purpose

• SMPS, Solar Inverters, UPS

• Power Switching Circuit

YWW

= Assembly Plant Code

= Date Code (Year & Week)

= Lot Code

FFSH5065B

= Specific Device Code

ORDERING INFORMATION

See detailed ordering and shipping information on page 2

of this data sheet.

Publication Order Number:

February, 2024 − Rev. 0

FFSH5065B−F155/D

12 3 4 5 6

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