Datasheet > FFSH5065A-F155

FFSH5065A-F155

更新时间： 2024-10-29 11:15:11

品牌	Logo	应用领域
安森美 - ONSEMI		二极管
页数	文件大小	规格书
6页	344K
描述
SiC 二极管，650V，50A，TO-247-3

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FFSH5065A-F155 数据手册

DATA SHEET

www.onsemi.com

Silicon Carbide (SiC)

Schottky Diode – EliteSiC,

50 A, 650 V, D1, TO-247-3L

FFSH5065A-F155

Description

TO−247−3LD

LONG LEAD

CASE 340CX

Silicon Carbide (SiC) Schottky Diodes use a completely new

technology that provides superior switching performance and higher

reliability compared to Silicon. No reverse recovery current,

temperature independent switching characteristics, and excellent

thermal performance sets Silicon Carbide as the next generation of

power semiconductor. System benefits include highest efficiency,

faster operating frequency, increased power density, reduced EMI, and

reduced system size & cost.

2. Cathode

3. Anode

1. No Connection

Schottky Diode

Features

• Max Junction Temperature 175°C

• Avalanche Rated 240 mJ

• High Surge Current Capacity

• Positive Temperature Coefficient

• Ease of Paralleling

MARKING DIAGRAM

AYWWKK

FFSH

5065AF155

• No Reverse Recovery/No Forward Recovery

• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS

Compliant

Applications

• General Purpose

• SMPS, Solar Inverter, UPS

• Power Switching Circuits

= Assembly Plant Code

YWW

= Date Code (Year & Week)

= Lot Traceability Code

FFSH5065AF155 = Specific Device Code

ORDERING INFORMATION

See detailed ordering and shipping information on page 2 of

this data sheet.

Publication Order Number:

February, 2023 − Rev. 3

FFSH5065A−F155/D

12 3 4 5 6

中文翻译

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