Datasheet > FFSH3065ADN-F155

FFSH3065ADN-F155

更新时间： 2024-10-29 11:15:19

品牌	Logo	应用领域
安森美 - ONSEMI		/
页数	文件大小	规格书
7页	398K
描述
Silicon Carbide (SiC) Schottky Diode – EliteSiC, 30 A, 650 V, D1, TO-247-3L

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FFSH3065ADN-F155 数据手册

DATA SHEET

www.onsemi.com

Silicon Carbide (SiC)

Schottky Diode – EliteSiC,

30 A, 650 V, D1, TO-247-3L

FFSH3065ADN-F155

TO−247

LONG LEAD

CASE 340CH

Description

Silicon Carbide (SiC) Schottky Diodes use a completely new

technology that provides superior switching performance and higher

reliability compared to Silicon. No reverse recovery current,

temperature independent switching characteristics, and excellent

thermal performance sets Silicon Carbide as the next generation of

power semiconductor. System benefits include highest efficiency,

faster operating frequency, increased power density, reduced EMI, and

reduced system size and cost.

Anode Cathode/Case Anode

Features

MARKING DIAGRAM

• Max Junction Temperature 175°C

• Avalanche Rated 81 mJ

• High Surge Current Capacity

• Positive Temperature Coefficient

• Ease of Paralleling

AYWWKK

FFSH

3065ADN

• No Reverse Recovery/No Forward Recovery

• This Device is Pb−Free, Halogen Free/BFR Free and RoHS

Compliant

Applications

• General Purpose

• SMPS, Solar Inverter, UPS

• Power Switching Circuits

YWW

= Assembly Plant Code

= Date Code (Year & Week)

= Lot Traceability Code

FFSH3065ADN

= Specific Device Code

ORDERING INFORMATION

See detailed ordering and shipping information in the package

dimensions section on page 2 of this data sheet.

Publication Order Number:

FFSH3065ADN−F155/D

February, 2023 − Rev. 5

12 3 4 5 6 7

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