Datasheet > FFSH20120A-F155

FFSH20120A-F155

更新时间： 2024-10-29 11:15:27

品牌	Logo	应用领域
安森美 - ONSEMI		/
页数	文件大小	规格书
6页	337K
描述
Silicon Carbide (SiC) Schottky Diode – EliteSiC, 20 A, 1200 V, D1, TO-247-2L

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FFSH20120A-F155 数据手册

DATA SHEET

www.onsemi.com

Silicon Carbide (SiC)

Schottky Diode – EliteSiC,

20 A, 1200 V, D1, TO-247-2L

1. Cathode

2. Anode

Schottky Diode

FFSH20120A-F155

Description

Silicon Carbide (SiC) Schottky Diodes use a completely new

technology that provides superior switching performance and higher

reliability compared to Silicon. No reverse recovery current,

temperature independent switching characteristics, and excellent

thermal performance sets Silicon Carbide as the next generation of

power semiconductor. System benefits include highest efficiency,

faster operating frequency, increased power density, reduced EMI, and

reduced system size and cost.

TO−247−2LD

CASE 340DC

MARKING DIAGRAM

Features

• Max Junction Temperature 175°C

• Avalanche Rated 200 mJ

• High Surge Current Capacity

• Positive Temperature Coefficient

• Ease of Paralleling

AYWWZZ

FFSH

20120A

• No Reverse Recovery/No Forward Recovery

• This Device is Pb−Free, Halogen Free/BFR Free and RoHS

Compliant

Applications

• General Purpose

• SMPS, Solar Inverter, UPS

• Power Switching Circuits

YWW

= Assembly Plant Code

= Date Code (Year & Week)

= Lot Code

FFSH20120A

= Specific Device Code

ORDERING INFORMATION

See detailed ordering and shipping information on page 2 of

this data sheet.

Publication Order Number:

January, 2023 − Rev. 1

FFSH20120A−F155/D

12 3 4 5 6

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