Datasheet > FFSH1265BDN-F085

FFSH1265BDN-F085

更新时间： 2024-10-29 11:16:03

品牌	Logo	应用领域
安森美 - ONSEMI		/
页数	文件大小	规格书
6页	334K
描述
Silicon Carbide (SiC) Schottky Diode - EliteSiC, 12A, 650V, D2, TO-247-3L

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FFSH1265BDN-F085 数据手册

DATA SHEET

www.onsemi.com

Silicon Carbide (SiC)

Schottky Diode – EliteSiC,

12 A, 650 V, D2, TO-247-3L

Anode

Cathode/

Case

Anode

650 V, 12 A

Schottky Diode

FFSH1265BDN-F085

Description

Silicon Carbide (SiC) Schottky Diodes use a completely new

technology that provides superior switching performance and higher

reliability compared to Silicon. No reverse recovery current,

temperature independent switching characteristics, and excellent

thermal performance sets Silicon Carbide as the next generation of

power semiconductor. System benefits include highest efficiency,

faster operating frequency, increased power density, reduced EMI, and

reduced system size & cost.

TO−247−3LD

CASE 340CX

Features

MARKING DIAGRAM

• Max Junction Temperature 175°C

• Avalanche Rated 24.5 mJ

• High Surge Current Capacity

• Positive Temperature Coefficient

• Ease of Paralleling

AYWWZZ

FFSH

1265BDN

• No Reverse Recovery/No Forward Recovery

• AEC−Q101 Qualified

• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS

Compliant

Applications

• Automotive HEV−EV Onboard Chargers

• Automotive HEV−EV DC−DC Converters

FFSH1265BDN

YWW

= Specific Device Code

= Assembly Plant Code

= Date Code (Year & Week)

= Pb−Free Package

ORDERING INFORMATION

See detailed ordering and shipping information on page 2 of

this data sheet.

Publication Order Number:

FFSH1265BDN−F085/D

February, 2023 − Rev. 1

12 3 4 5 6

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