Datasheet > FFSH10120ADN-F155

FFSH10120ADN-F155

更新时间： 2024-10-29 11:15:27

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安森美 - ONSEMI		/
页数	文件大小	规格书
7页	302K
描述
Silicon Carbide (SiC) Schottky Diode – EliteSiC, 10 A, 1200 V, D1, TO-247-3L

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FFSH10120ADN-F155 数据手册

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DATA SHEET

www.onsemi.com

Silicon Carbide (SiC)

Schottky Diode – EliteSiC,

10 A, 1200 V, D1, TO-247-3L

1. Anode

3. Anode

2. Cathode/

Case

Schottky Diode

FFSH10120ADN-F155

Description

Silicon Carbide (SiC) Schottky Diodes use a completely new

technology that provides superior switching performance and higher

reliability compared to Silicon. No reverse recovery current,

temperature independent switching characteristics, and excellent

thermal performance sets Silicon Carbide as the next generation of

power semiconductor. System benefits include highest efficiency,

faster operating frequency, increased power density, reduced EMI, and

reduced system size and cost.

TO−247−3LD

CASE 340CH

MARKING DIAGRAM

Features

• Max Junction Temperature 175°C

• Avalanche Rated 55 mJ

• High Surge Current Capacity

• Positive Temperature Coefficient

• Ease of Paralleling

FFSH

10120ADN

AYWWG

• No Reverse Recovery/No Forward Recovery

• This Device is Pb−Free, Halogen Free/BFR Free and RoHS

Compliant

Applications

• General Purpose

• SMPS, Solar Inverter, UPS

• Power Switching Circuits

FFSH10120ADN

YWW

= Specific Device Code

= Assembly Plant Code

= Date Code (Year & Week)

= Pb−Free Package

ORDERING INFORMATION

See detailed ordering and shipping information on page 2 of

this data sheet.

Publication Order Number:

FFSH10120ADN−F155/D

January, 2023 − Rev. 4

12 3 4 5 6 7

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