Datasheet > FFSH10120A-F085

FFSH10120A-F085

更新时间： 2024-10-29 11:12:43

品牌	Logo	应用领域
安森美 - ONSEMI		/
页数	文件大小	规格书
6页	351K
描述
SiC 肖特基整流器，1200 V，10 A

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中文翻译

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FFSH10120A-F085 数据手册

DATA SHEET

www.onsemi.com

Silicon Carbide (SiC)

Schottky Diode – EliteSiC,

10 A, 1200 V, D1, TO-247-2L

1. Cathode

2. Anode

Schottky Diode

FFSH10120A-F085

Description

Silicon Carbide (SiC) Schottky Diodes use a completely new

technology that provides superior switching performance and higher

reliability compared to Silicon. No reverse recovery current,

temperature independent switching characteristics, and excellent

thermal performance sets Silicon Carbide as the next generation of

power semiconductor. System benefits include highest efficiency,

faster operating frequency, increased power density, reduced EMI, and

reduced system size & cost.

TO−247−2LD

CASE 340CL

MARKING DIAGRAM

Features

• Max Junction Temperature 175°C

• Avalanche Rated 100 mJ

• High Surge Current Capacity

• Positive Temperature Coefficient

• Ease of Paralleling

AYWWZZ

FFSH

10120A

• No Reverse Recovery/No Forward Recovery

• AEC−Q101 Qualified and PPAP Capable

• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS

Compliant

YWW

= Assembly Plant Code

= Date Code (Year & Week)

= Lot Code

Applications

• Automotive HEV−EV Onboard Chargers

• Automotive HEV−EV DC−DC Converters

FFSH10120A

= Specific Device Code

ORDERING INFORMATION

See detailed ordering and shipping information on page 2 of

this data sheet.

Publication Order Number:

February, 2023 − Rev. 2

FFSH10120A−F085/D

12 3 4 5 6

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