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FFSH10120A-F155 PDF预览

FFSH10120A-F155

更新时间: 2024-10-29 11:11:55
品牌 Logo 应用领域
安森美 - ONSEMI /
页数 文件大小 规格书
7页 364K
描述
Silicon Carbide (SiC) Schottky Diode – EliteSiC, 15 A, 1200 V, D1, TO-247-2L

FFSH10120A-F155 数据手册

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DATA SHEET  
www.onsemi.com  
Silicon Carbide (SiC)  
Schottky Diode – EliteSiC,  
10 A, 1200 V, D1, TO-247-2L  
1. Cathode  
2. Anode  
Schottky Diode  
FFSH10120A-F155  
Description  
Silicon Carbide (SiC) Schottky Diodes use a completely new  
technology that provides superior switching performance and higher  
reliability compared to Silicon. No reverse recovery current,  
temperature independent switching characteristics, and excellent  
thermal performance sets Silicon Carbide as the next generation of  
power semiconductor. System benefits include highest efficiency,  
faster operating frequency, increased power density, reduced EMI, and  
reduced system size & cost.  
TO2472LD  
CASE 340DC  
MARKING DIAGRAM  
Features  
Max Junction Temperature 175°C  
Avalanche Rated 100 mJ  
High Surge Current Capacity  
Positive Temperature Coefficient  
Ease of Paralleling  
AYWWZZ  
FFSH  
10120A  
No Reverse Recovery/No Forward Recovery  
These Devices are PbFree, Halogen Free/BFR Free and are RoHS  
Compliant  
Applications  
General Purpose  
SMPS, Solar Inverter, UPS  
Power Switching Circuits  
A
YWW  
ZZ  
= Assembly Plant Code  
= Date Code (Year & Week)  
= Lot Code  
FFSH10120A  
= Specific Device Code  
ORDERING INFORMATION  
See detailed ordering and shipping information on page 2 of  
this data sheet.  
© Semiconductor Components Industries, LLC, 2020  
1
Publication Order Number:  
January, 2023 Rev. 1  
FFSH10120AF155/D  

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