Datasheet > 晶体管 > IGBT> FF300R12KE4

FF300R12KE4

更新时间： 2024-02-12 03:15:10

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英飞凌 - INFINEON		晶体晶体管双极性晶体管栅局域网
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8页	285K
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Technische Information / technical information

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技术参数
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FF300R12KE4 技术参数

是否Rohs认证：	符合	生命周期：	Active
包装说明：	,	Reach Compliance Code：	compliant
风险等级：	5.55	峰值回流温度（摄氏度）：	NOT SPECIFIED
处于峰值回流温度下的最长时间：	NOT SPECIFIED	Base Number Matches：	1

FF300R12KE4 数据手册

Technische Information / technical information

IGBT-Module

IGBT-modules

FF300R12KE4

62mm C-Serien Modul mit Trench/Feldstopp IGBT4 und optimierter EmCon Diode

62mm C-series module with trench/fieldstop IGBT4 and optimized EmCon Diode

IGBT-Wechselrichter / IGBT-inverter

Vorläufige Daten / preliminary data

Höchstzulässige Werte / maximum rated values

Kollektor-Emitter-Sperrspannung

collector-emitter voltage

TÝÎ = 25°C

V†Š»

1200

Kollektor-Dauergleichstrom

DC-collector current

T† = 100°C, TÝÎ = 175°C

T† = 25°C, TÝÎ = 175°C

I† ÒÓÑ

I†

300

460

Periodischer Kollektor Spitzenstrom

repetitive peak collector current

t« = 1 ms

I†ç¢

PÚÓÚ

600

1600

+/-20

Gesamt-Verlustleistung

total power dissipation

T† = 25°C, TÝÎ = 175°C

Gate-Emitter-Spitzenspannung

gate-emitter peak voltage

V•Š»

Charakteristische Werte / characteristic values

min. typ. max.

Kollektor-Emitter Sättigungsspannung

collector-emitter saturation voltage

I† = 300 A, V•Š = 15 V

TÝÎ = 25°C

TÝÎ = 125°C V†Š ÙÈÚ

TÝÎ = 150°C

1,75 2,15

2,00

2,05

Gate-Schwellenspannung

gate threshold voltage

I† = 11,5 mA, V†Š = V•Š, TÝÎ = 25°C

V•Š = -15 V ... +15 V

V•ŠÚÌ

Q•

5,2

5,8

2,50

2,5

6,4

µC

Gateladung

gate charge

Interner Gatewiderstand

internal gate resistor

TÝÎ = 25°C

R•ÍÒÚ

CÍþÙ

CØþÙ

I†Š»

I•Š»

Eingangskapazität

input capacitance

f = 1 MHz, TÝÎ = 25°C, V†Š = 25 V, V•Š = 0 V

V†Š = 1200 V, V•Š = 0 V, TÝÎ = 25°C

V†Š = 0 V, V•Š = 20 V, TÝÎ = 25°C

19,0

0,70

Rückwirkungskapazität

reverse transfer capacitance

Kollektor-Emitter Reststrom

collector-emitter cut-off current

5,0 mA

400 nA

Gate-Emitter Reststrom

gate-emitter leakage current

Einschaltverzögerungszeit (ind. Last)

turn-on delay time (inductive load)

I† = 300 A, V†Š = 600 V

V•Š = ±15 V

R•ÓÒ = 1,8 Â

TÝÎ = 25°C

tÁ ÓÒ

0,20

0,25

0,27

µs

TÝÎ = 125°C

TÝÎ = 150°C

Anstiegszeit (induktive Last)

rise time (inductive load)

I† = 300 A, V†Š = 600 V

V•Š = ±15 V

R•ÓÒ = 1,8 Â

TÝÎ = 25°C

tØ

0,045

0,05

0,055

µs

TÝÎ = 125°C

TÝÎ = 150°C

Abschaltverzögerungszeit (ind. Last)

turn-off delay time (inductive load)

I† = 300 A, V†Š = 600 V

V•Š = ±15 V

R•ÓËË = 1,8 Â

TÝÎ = 25°C

tÁ ÓËË

0,50

0,60

0,62

µs

TÝÎ = 125°C

TÝÎ = 150°C

Fallzeit (induktive Last)

fall time (inductive load)

I† = 300 A, V†Š = 600 V

V•Š = ±15 V

R•ÓËË = 1,8 Â

TÝÎ = 25°C

tË

0,10

0,16

0,18

µs

TÝÎ = 125°C

TÝÎ = 150°C

Einschaltverlustenergie pro Puls

turn-on energy loss per pulse

I† = 300 A, V†Š = 600 V, L» = 30 nH TÝÎ = 25°C

V•Š = ±15 V, di/dt = 6000 A/µs (TÝÎ=150°C) TÝÎ = 125°C

16,5

25,0

30,0

EÓÒ

EÓËË

R•ÓÒ = 1,8 Â

TÝÎ = 150°C

Abschaltverlustenergie pro Puls

turn-off energy loss per pulse

I† = 300 A, V†Š = 600 V, L» = 30 nH TÝÎ = 25°C

V•Š = ±15 V, du/dt = 4000 V/µs (TÝÎ=150°C) TÝÎ = 125°C

23,5

35,0

39,0

R•ÓËË = 1,8 Â

TÝÎ = 150°C

Kurzschlussverhalten

SC data

V•Š ù 15 V, V†† = 900 V

V†ŠÑÈà = V†Š» -LÙ†Š ·di/dt

I»†

t« ù 10 µs, TÝÎ = 150°C

1200

Innerer Wärmewiderstand

thermal resistance, junction to case

pro IGBT / per IGBT

ð«ÈÙÚþ = 1 W/(m·K)

RÚÌœ†

RÚÌ†™

0,093 K/W

Übergangs-Wärmewiderstand

thermal resistance, case to heatsink

0,032

K/W

ðÃØþÈÙþ = 1 W/(m·K)

prepared by: Martin Knecht

date of publication: 2008-01-09

revision: 2.1

approved by: Wilhelm Rusche

12 3 4 5 6 7 8

中文翻译

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FF300R12KE4 替代型号

型号	品牌	替代类型	描述	数据表
BSM400GA120DLCS	INFINEON	类似代替	Insulated Gate Bipolar Transistor, 625A I(C), 1200V V(BR)CES, N-Channel, MODULE-5
FZ400R12KE4	INFINEON	功能相似	62mm C-Serien Modul mit Trench/Fieldstopp IGBT4 und Emitter Controlled 4 Diode
SKM300GB12E4	SEMIKRON	功能相似	IGBT4 Modules

与FF300R12KE4相关器件

型号	品牌	获取价格	描述	数据表
FF300R12KE4_B2	INFINEON	获取价格	62mm C-series module with trench/fieldstop IGBT4, Emitter Controlled diode and M5 power te
FF300R12KE4_E	INFINEON	获取价格	Insulated Gate Bipolar Transistor
FF300R12KE4B2HOSA1	INFINEON	获取价格	Insulated Gate Bipolar Transistor, 460A I(C), 1200V V(BR)CES, N-Channel, MODULE-7
FF300R12KE4P	INFINEON	获取价格	暂无描述
FF300R12KE4PHOSA1	INFINEON	获取价格	Insulated Gate Bipolar Transistor, 1200V V(BR)CES, N-Channel, MODULE-7
FF300R12KF2	ETC	获取价格	TRANSISTOR \| IGBT \| N-CHAN \| DUAL \| 1.2KV V(BR)CES \| 300A I(C) \| M:HL093HW060
FF300R12KS4	INFINEON	获取价格	Technische Information / technical information
FF300R12KS4HOSA1	INFINEON	获取价格	Insulated Gate Bipolar Transistor, 370A I(C), 1200V V(BR)CES, N-Channel, MODULE-7
FF300R12KS4P	INFINEON	获取价格	暂无描述
FF300R12KT3	INFINEON	获取价格	62mm C-Serien Modul mit schnellem Trench/Feldstop IGBT3 und EmCon High Efficiency Diode

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