Datasheet > FF300R17KE3

FF300R17KE3

更新时间： 2024-11-18 03:09:11

品牌	Logo	应用领域
EUPEC		晶体二极管晶体管双极性晶体管局域网
页数	文件大小	规格书
8页	265K
描述
62mm C-series module with trench/fieldstop IGBT3 and EmCon3 diode

阅读下载

中文翻译

获取价格

技术参数
数据手册

如果您发现信息不准确，欢迎纠错

FF300R17KE3 技术参数

生命周期：	Transferred	包装说明：	MODULE-7
Reach Compliance Code：	unknown	风险等级：	5.54
Is Samacsys：	N	外壳连接：	ISOLATED
最大集电极电流 (IC)：	404 A	集电极-发射极最大电压：	1700 V
配置：	SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE	JESD-30 代码：	R-XUFM-X7
元件数量：	2	端子数量：	7
封装主体材料：	UNSPECIFIED	封装形状：	RECTANGULAR
封装形式：	FLANGE MOUNT	极性/信道类型：	N-CHANNEL
认证状态：	Not Qualified	表面贴装：	NO
端子形式：	UNSPECIFIED	端子位置：	UPPER
晶体管元件材料：	SILICON	标称断开时间 (toff)：	1200 ns
标称接通时间 (ton)：	400 ns	Base Number Matches：	1

FF300R17KE3 数据手册

Technische Information / technical information

IGBT-Module

IGBT-modules

FF300R17KE3

62mm C-Serien Modul mit Trench/Feldstop IGBT3 und EmCon3 Diode

62mm C-series module with trench/fieldstop IGBT3 and EmCon3 diode

IGBT-Wechselrichter / IGBT-inverter

Vorläufige Daten / preliminary data

Höchstzulässige Werte / maximum rated values

Kollektor-Emitter-Sperrspannung

collector-emitter voltage

TÝÎ = 25°C

V†Š»

1700

Kollektor-Dauergleichstrom

DC-collector current

T† = 80°C, TÝÎ = 150°C

T† = 25°C, TÝÎ = 150°C

I† ÒÓÑ

I†

300

404

Periodischer Kollektor Spitzenstrom

repetitive peak collector current

t« = 1 ms

I†ç¢

PÚÓÚ

600

1450

+/-20

Gesamt-Verlustleistung

total power dissipation

T† = 25°C, TÝÎ = 150°C

Gate-Emitter-Spitzenspannung

gate-emitter peak voltage

V•Š»

Charakteristische Werte / characteristic values

min. typ. max.

Kollektor-Emitter Sättigungsspannung

collector-emitter saturation voltage

I† = 300 A, V•Š = 15 V

TÝÎ = 25°C

TÝÎ = 125°C

2,00 2,45

2,40

V†Š ÙÈÚ

V•ŠÚÌ

Q•

Gate-Schwellenspannung

gate threshold voltage

I† = 12,0 mA, V†Š = V•Š, TÝÎ = 25°C

V•Š = -15 V ... +15 V

5,2

5,8

3,50

2,5

6,4

µC

Gateladung

gate charge

Interner Gatewiderstand

internal gate resistor

TÝÎ = 25°C

R•ÍÒÚ

CÍþÙ

Eingangskapazität

input capacitance

f = 1 MHz, TÝÎ = 25°C, V†Š = 25 V, V•Š = 0 V

V†Š = 1700 V, V•Š = 0 V, TÝÎ = 25°C

V†Š = 0 V, V•Š = 20 V, TÝÎ = 25°C

27,0

0,90

Rückwirkungskapazität

reverse transfer capacitance

CØþÙ

I†Š»

Kollektor-Emitter Reststrom

collector-emitter cut-off current

3,0

Gate-Emitter Reststrom

gate-emitter leakage current

I•Š»

tÁ ÓÒ

400

Einschaltverzögerungszeit (ind. Last)

turn-on delay time (inductive load)

I† = 300 A, V†Š = 900 V

V•Š = ±15 V

R•ÓÒ = 4,7 Â

TÝÎ = 25°C

TÝÎ = 125°C

0,28

0,30

µs

Anstiegszeit (induktive Last)

rise time (inductive load)

I† = 300 A, V†Š = 900 V

V•Š = ±15 V

R•ÓÒ = 4,7 Â

TÝÎ = 25°C

TÝÎ = 125°C

0,08

0,10

µs

tØ

tÁ ÓËË

tË

Abschaltverzögerungszeit (ind. Last)

turn-off delay time (inductive load)

I† = 300 A, V†Š = 900 V

V•Š = ±15 V

R•ÓËË = 4,7 Â

TÝÎ = 25°C

TÝÎ = 125°C

0,80

1,00

µs

Fallzeit (induktive Last)

fall time (inductive load)

I† = 300 A, V†Š = 900 V

V•Š = ±15 V

R•ÓËË = 4,7 Â

TÝÎ = 25°C

TÝÎ = 125°C

0,12

0,20

µs

Einschaltverlustenergie pro Puls

turn-on energy loss per pulse

I† = 300 A, V†Š = 900 V, L» = 60 nH

V•Š = ±15 V, di/dt = 3600 A/µs (TÝÎ=125°C) TÝÎ = 125°C

R•ÓÒ = 4,7 Â

TÝÎ = 25°C

71,0

105

EÓÒ

Abschaltverlustenergie pro Puls

turn-off energy loss per pulse

I† = 300 A, V†Š = 900 V, L» = 60 nH

V•Š = ±15 V, du/dt = 3500 V/µs (TÝÎ=125°C) TÝÎ = 125°C

R•ÓËË = 4,7 Â

TÝÎ = 25°C

64,0

94,0

EÓËË

Kurzschlussverhalten

SC data

V•Š ù 15 V, V†† = 1000 V

V†ŠÑÈà = V†Š» -LÙ†Š ·di/dt

I»†

t« ù 10 µs, TÝÎ = 125°C

1200

Innerer Wärmewiderstand

thermal resistance, junction to case

pro IGBT

per IGBT

RÚÌœ†

RÚÌ†™

0,085 K/W

K/W

Übergangs-Wärmewiderstand

thermal resistance, case to heatsink

pro IGBT / per IGBT

ð«ÈÙÚþ = 1 W/(m·K)

0,033

ðÃØþÈÙþ = 1 W/(m·K)

prepared by: Helmut Seidelmann

approved by: Wilhelm Rusche

date of publication: 2006-4-27

revision: 2.1

12 3 4 5 6 7 8

中文翻译

下载PDF

与FF300R17KE3相关器件

型号	品牌	获取价格	描述	数据表
FF300R17KE3HOSA1	INFINEON	获取价格	Insulated Gate Bipolar Transistor, 404A I(C), 1700V V(BR)CES, N-Channel, MODULE-7
FF300R17KE4	INFINEON	获取价格	62mm C-Series module with trench/Fieldstopp IGBT4 and Emitter Controlled Diode
FF300R17KE4HOSA1	INFINEON	获取价格	Insulated Gate Bipolar Transistor, 440A I(C), 1700V V(BR)CES, N-Channel, MODULE-7
FF300R17KE4P	INFINEON	获取价格	Insulated Gate Bipolar Transistor,
FF300R17KE4PHOSA1	INFINEON	获取价格	Insulated Gate Bipolar Transistor, 440A I(C), 1700V V(BR)CES, N-Channel, MODULE-7
FF300R17ME3	INFINEON	获取价格	EconoDUAL3 module with trench/fieldstop IGBT3 and EmCon3 diode
FF300R17ME3BOSA1	INFINEON	获取价格	Insulated Gate Bipolar Transistor, 375A I(C), 1700V V(BR)CES, N-Channel, MODULE-11
FF300R17ME3ENG	INFINEON	获取价格	暂无描述
FF300R17ME4	INFINEON	获取价格	EconoDUAL3 module with trench/fieldstop IGBT4 and Emitter Controlled3 diode
FF300R17ME4_B11	INFINEON	获取价格	EconoDUAL3 module with trench/fieldstop IGBT4 and Emitter Controlled Diode and PressFIT /

与FF300R17KE3相关文章

解析光耦仿真器：升级光耦合器技术的必要性
2024-11-18

17
英伟达新一代Blackwell GPU过热问题致交付延迟
2024-11-18

12
国产厂商思特威CMOS图像传感器芯片单月出货超1亿颗，技术创新引领行业发展
2024-11-14

42
台积电5nm和3nm产能利用率达100%，半导体行业景气度持续攀升
2024-11-14

37

产品中心

服务支持

精选活动

关于我们

帮助中心

FF300R17KE3

FF300R17KE3 技术参数

FF300R17KE3 数据手册

与FF300R17KE3相关器件

与FF300R17KE3相关文章

您还可以找

产品中心

服务支持

精选活动

关于我们

帮助中心

FF300R17KE3

FF300R17KE3 技术参数

FF300R17KE3 数据手册

与FF300R17KE3相关器件

与FF300R17KE3相关文章

您还可以找

您在本页遇到什么问题？