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FF300R17KE3 PDF预览

FF300R17KE3

更新时间: 2024-01-31 11:19:14
品牌 Logo 应用领域
EUPEC 晶体二极管晶体管双极性晶体管局域网
页数 文件大小 规格书
8页 265K
描述
62mm C-series module with trench/fieldstop IGBT3 and EmCon3 diode

FF300R17KE3 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Active零件包装代码:MODULE
包装说明:FLANGE MOUNT, R-XUFM-X7针数:7
Reach Compliance Code:compliantECCN代码:EAR99
风险等级:5.05外壳连接:ISOLATED
最大集电极电流 (IC):404 A集电极-发射极最大电压:1700 V
配置:SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE门极-发射极最大电压:20 V
JESD-30 代码:R-XUFM-X7元件数量:2
端子数量:7最高工作温度:150 °C
封装主体材料:UNSPECIFIED封装形状:RECTANGULAR
封装形式:FLANGE MOUNT峰值回流温度(摄氏度):NOT SPECIFIED
极性/信道类型:N-CHANNEL最大功率耗散 (Abs):1450 W
认证状态:Not Qualified子类别:Insulated Gate BIP Transistors
表面贴装:NO端子形式:UNSPECIFIED
端子位置:UPPER处于峰值回流温度下的最长时间:NOT SPECIFIED
晶体管元件材料:SILICON标称断开时间 (toff):1200 ns
标称接通时间 (ton):400 nsVCEsat-Max:2.45 V
Base Number Matches:1

FF300R17KE3 数据手册

 浏览型号FF300R17KE3的Datasheet PDF文件第2页浏览型号FF300R17KE3的Datasheet PDF文件第3页浏览型号FF300R17KE3的Datasheet PDF文件第4页浏览型号FF300R17KE3的Datasheet PDF文件第5页浏览型号FF300R17KE3的Datasheet PDF文件第6页浏览型号FF300R17KE3的Datasheet PDF文件第7页 
Technische Information / technical information  
IGBT-Module  
IGBT-modules  
FF300R17KE3  
62mm C-Serien Modul mit Trench/Feldstop IGBT3 und EmCon3 Diode  
62mm C-series module with trench/fieldstop IGBT3 and EmCon3 diode  
IGBT-Wechselrichter / IGBT-inverter  
Vorläufige Daten / preliminary data  
chstzulässige Werte / maximum rated values  
Kollektor-Emitter-Sperrspannung  
collector-emitter voltage  
TÝÎ = 25°C  
V†Š»  
1700  
V
Kollektor-Dauergleichstrom  
DC-collector current  
T† = 80°C, TÝÎ = 150°C  
T† = 25°C, TÝÎ = 150°C  
I† ÒÓÑ  
I†  
300  
404  
A
A
Periodischer Kollektor Spitzenstrom  
repetitive peak collector current  
t« = 1 ms  
I†ç¢  
PÚÓÚ  
600  
1450  
+/-20  
A
W
V
Gesamt-Verlustleistung  
total power dissipation  
T† = 25°C, TÝÎ = 150°C  
Gate-Emitter-Spitzenspannung  
gate-emitter peak voltage  
V•Š»  
Charakteristische Werte / characteristic values  
min. typ. max.  
Kollektor-Emitter Sättigungsspannung  
collector-emitter saturation voltage  
I† = 300 A, V•Š = 15 V  
I† = 300 A, V•Š = 15 V  
TÝÎ = 25°C  
TÝÎ = 125°C  
2,00 2,45  
2,40  
V
V
V†Š ÙÈÚ  
V•ŠÚÌ  
Q•  
Gate-Schwellenspannung  
gate threshold voltage  
I† = 12,0 mA, V†Š = V•Š, TÝÎ = 25°C  
V•Š = -15 V ... +15 V  
5,2  
5,8  
3,50  
2,5  
6,4  
V
µC  
Â
Gateladung  
gate charge  
Interner Gatewiderstand  
internal gate resistor  
TÝÎ = 25°C  
R•ÍÒÚ  
CÍþÙ  
Eingangskapazität  
input capacitance  
f = 1 MHz, TÝÎ = 25°C, V†Š = 25 V, V•Š = 0 V  
f = 1 MHz, TÝÎ = 25°C, V†Š = 25 V, V•Š = 0 V  
V†Š = 1700 V, V•Š = 0 V, TÝÎ = 25°C  
V†Š = 0 V, V•Š = 20 V, TÝÎ = 25°C  
27,0  
0,90  
nF  
nF  
mA  
nA  
Rückwirkungskapazität  
reverse transfer capacitance  
CØþÙ  
I†Š»  
Kollektor-Emitter Reststrom  
collector-emitter cut-off current  
3,0  
Gate-Emitter Reststrom  
gate-emitter leakage current  
I•Š»  
tÁ ÓÒ  
400  
Einschaltverzögerungszeit (ind. Last)  
turn-on delay time (inductive load)  
I† = 300 A, V†Š = 900 V  
V•Š = ±15 V  
R•ÓÒ = 4,7 Â  
TÝÎ = 25°C  
TÝÎ = 125°C  
0,28  
0,30  
µs  
µs  
Anstiegszeit (induktive Last)  
rise time (inductive load)  
I† = 300 A, V†Š = 900 V  
V•Š = ±15 V  
R•ÓÒ = 4,7 Â  
TÝÎ = 25°C  
TÝÎ = 125°C  
0,08  
0,10  
µs  
µs  
tØ  
tÁ ÓËË  
tË  
Abschaltverzögerungszeit (ind. Last)  
turn-off delay time (inductive load)  
I† = 300 A, V†Š = 900 V  
V•Š = ±15 V  
R•ÓËË = 4,7 Â  
TÝÎ = 25°C  
TÝÎ = 125°C  
0,80  
1,00  
µs  
µs  
Fallzeit (induktive Last)  
fall time (inductive load)  
I† = 300 A, V†Š = 900 V  
V•Š = ±15 V  
R•ÓËË = 4,7 Â  
TÝÎ = 25°C  
TÝÎ = 125°C  
0,12  
0,20  
µs  
µs  
Einschaltverlustenergie pro Puls  
turn-on energy loss per pulse  
I† = 300 A, V†Š = 900 V, L» = 60 nH  
V•Š = ±15 V, di/dt = 3600 A/µs (TÝÎ=125°C) TÝÎ = 125°C  
R•ÓÒ = 4,7 Â  
TÝÎ = 25°C  
71,0  
105  
mJ  
mJ  
EÓÒ  
Abschaltverlustenergie pro Puls  
turn-off energy loss per pulse  
I† = 300 A, V†Š = 900 V, L» = 60 nH  
V•Š = ±15 V, du/dt = 3500 V/µs (TÝÎ=125°C) TÝÎ = 125°C  
R•ÓËË = 4,7 Â  
TÝÎ = 25°C  
64,0  
94,0  
mJ  
mJ  
EÓËË  
Kurzschlussverhalten  
SC data  
V•Š ù 15 V, V†† = 1000 V  
V†ŠÑÈà = V†Š» -LÙ†Š ·di/dt  
I»†  
t« ù 10 µs, TÝÎ = 125°C  
1200  
A
Innerer Wärmewiderstand  
thermal resistance, junction to case  
pro IGBT  
per IGBT  
RÚÌœ†  
RÚ̆™  
0,085 K/W  
K/W  
Übergangs-Wärmewiderstand  
thermal resistance, case to heatsink  
pro IGBT / per IGBT  
ð«ÈÙÚþ = 1 W/(m·K)  
0,033  
/
ðÃØþÈÙþ = 1 W/(m·K)  
prepared by: Helmut Seidelmann  
approved by: Wilhelm Rusche  
date of publication: 2006-4-27  
revision: 2.1  
1

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