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FF300R17ME4

更新时间： 2024-01-02 11:35:30
品牌 Logo 应用领域
英飞凌 - INFINEON 晶体二极管晶体管功率控制双极性晶体管栅局域网
页数 文件大小 规格书
8页 311K
描述
EconoDUAL3 module with trench/fieldstop IGBT4 and Emitter Controlled3 diode

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中文翻译

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FF300R17ME4 技术参数

是否Rohs认证： 符合生命周期：Active
包装说明：,Reach Compliance Code：compliant
风险等级：5.56峰值回流温度（摄氏度）：NOT SPECIFIED
处于峰值回流温度下的最长时间：NOT SPECIFIEDBase Number Matches：1

FF300R17ME4 数据手册

 浏览型号FF300R17ME4的Datasheet PDF文件第2页浏览型号FF300R17ME4的Datasheet PDF文件第3页浏览型号FF300R17ME4的Datasheet PDF文件第4页浏览型号FF300R17ME4的Datasheet PDF文件第5页浏览型号FF300R17ME4的Datasheet PDF文件第6页浏览型号FF300R17ME4的Datasheet PDF文件第7页 
Technische Information / technical information  
IGBT-Module  
IGBT-modules  
FF300R17ME4  
EconoDUAL™3 Modul mit Trench/Feldstop IGBT4 und Emitter Controlled³ Diode  
EconoDUAL™3 module with trench/fieldstop IGBT4 and Emitter Controlled³ diode  
IGBT-Wechselrichter / IGBT-inverter  
Vorläufige Daten / preliminary data  
Höchstzulässige Werte / maximum rated values  
Kollektor-Emitter-Sperrspannung  
collector-emitter voltage  
TÝÎ = 25°C  
V†Š»  
1700  
V
Kollektor-Dauergleichstrom  
DC-collector current  
T† = 100°C, TÝÎ = 175°C  
T† = 25°C, TÝÎ = 175°C  
I† ÒÓÑ  
I†  
300  
375  
A
A
Periodischer Kollektor Spitzenstrom  
repetitive peak collector current  
t« = 1 ms  
I†ç¢  
PÚÓÚ  
600  
1800  
+/-20  
A
W
V
Gesamt-Verlustleistung  
total power dissipation  
T† = 25°C, TÝÎ = 175°C  
Gate-Emitter-Spitzenspannung  
gate-emitter peak voltage  
V•Š»  
Charakteristische Werte / characteristic values  
min. typ. max.  
Kollektor-Emitter Sättigungsspannung  
collector-emitter saturation voltage  
I† = 300 A, V•Š = 15 V  
I† = 300 A, V•Š = 15 V  
I† = 300 A, V•Š = 15 V  
TÝÎ = 25°C  
TÝÎ = 125°C V†Š ÙÈÚ  
TÝÎ = 150°C  
1,95 2,30  
2,35  
2,45  
V
V
V
Gate-Schwellenspannung  
gate threshold voltage  
I† = 12,0 mA, V†Š = V•Š, TÝÎ = 25°C  
V•Š = -15 V ... +15 V  
V•ŠÚÌ  
Q•  
5,2  
5,8  
3,05  
2,5  
6,4  
V
µC  
Â
Gateladung  
gate charge  
Interner Gatewiderstand  
internal gate resistor  
TÝÎ = 25°C  
R•ÍÒÚ  
CÍþÙ  
CØþÙ  
I†Š»  
I•Š»  
Eingangskapazität  
input capacitance  
f = 1 MHz, TÝÎ = 25°C, V†Š = 25 V, V•Š = 0 V  
f = 1 MHz, TÝÎ = 25°C, V†Š = 25 V, V•Š = 0 V  
V†Š = 1700 V, V•Š = 0 V, TÝÎ = 25°C  
V†Š = 0 V, V•Š = 20 V, TÝÎ = 25°C  
24,5  
0,81  
nF  
nF  
mA  
Rückwirkungskapazität  
reverse transfer capacitance  
Kollektor-Emitter Reststrom  
collector-emitter cut-off current  
3,0  
Gate-Emitter Reststrom  
gate-emitter leakage current  
400 nA  
Einschaltverzögerungszeit (ind. Last)  
turn-on delay time (inductive load)  
I† = 300 A, V†Š = 900 V  
V•Š = ±15 V  
R•ÓÒ = 3,3 Â  
TÝÎ = 25°C  
tÁ ÓÒ  
0,25  
0,30  
0,31  
µs  
µs  
µs  
TÝÎ = 125°C  
TÝÎ = 150°C  
Anstiegszeit (induktive Last)  
rise time (inductive load)  
I† = 300 A, V†Š = 900 V  
V•Š = ±15 V  
R•ÓÒ = 3,3 Â  
TÝÎ = 25°C  
tØ  
0,087  
0,092  
0,095  
µs  
µs  
µs  
TÝÎ = 125°C  
TÝÎ = 150°C  
Abschaltverzögerungszeit (ind. Last)  
turn-off delay time (inductive load)  
I† = 300 A, V†Š = 900 V  
V•Š = ±15 V  
R•ÓËË = 4,7 Â  
TÝÎ = 25°C  
tÁ ÓËË  
0,73  
0,88  
0,92  
µs  
µs  
µs  
TÝÎ = 125°C  
TÝÎ = 150°C  
Fallzeit (induktive Last)  
fall time (inductive load)  
I† = 300 A, V†Š = 900 V  
V•Š = ±15 V  
R•ÓËË = 4,7 Â  
TÝÎ = 25°C  
tË  
0,28  
0,53  
0,60  
µs  
µs  
µs  
TÝÎ = 125°C  
TÝÎ = 150°C  
Einschaltverlustenergie pro Puls  
turn-on energy loss per pulse  
I† = 300 A, V†Š = 900 V, L» = 80 nH TÝÎ = 25°C  
V•Š = ±15 V, di/dt = 3000 A/µs (TÝÎ=150°C) TÝÎ = 125°C  
72,0  
92,0  
100  
mJ  
mJ  
mJ  
EÓÒ  
R•ÓÒ = 3,3 Â  
TÝÎ = 150°C  
Abschaltverlustenergie pro Puls  
turn-off energy loss per pulse  
I† = 300 A, V†Š = 900 V, L» = 80 nH TÝÎ = 25°C  
V•Š = ±15 V, du/dt = 3000 V/µs (TÝÎ=150°C) TÝÎ = 125°C  
61,0  
98,5  
110  
mJ  
mJ  
mJ  
EÓËË  
R•ÓËË = 4,7 Â  
TÝÎ = 150°C  
Kurzschlussverhalten  
SC data  
V•Š ù 15 V, V†† = 1000 V  
V†ŠÑÈà = V†Š» -LÙ†Š ·di/dt  
I»†  
t« ù 10 µs, TÝÎ = 150°C  
1400  
A
Innerer Wärmewiderstand  
thermal resistance, junction to case  
pro IGBT / per IGBT  
pro IGBT / per IGBT  
ð«ÈÙÚþ = 1 W/(m·K)  
RÚÌœ†  
RÚ̆™  
0,083 K/W  
Übergangs-Wärmewiderstand  
thermal resistance, case to heatsink  
0,029  
K/W  
/
ðÃØþÈÙþ = 1 W/(m·K)  
prepared by: CU  
approved by: MK  
date of publication: 2011-03-01  
revision: 2.3  
1
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中文翻译

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