是否Rohs认证: | 符合 | 生命周期: | Active |
包装说明: | , | Reach Compliance Code: | compliant |
风险等级: | 5.56 | Is Samacsys: | N |
峰值回流温度(摄氏度): | NOT SPECIFIED | 处于峰值回流温度下的最长时间: | NOT SPECIFIED |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
FF300R17KE4HOSA1 | INFINEON |
获取价格 |
Insulated Gate Bipolar Transistor, 440A I(C), 1700V V(BR)CES, N-Channel, MODULE-7 |
![]() |
FF300R17KE4P | INFINEON |
获取价格 |
Insulated Gate Bipolar Transistor, |
![]() |
FF300R17KE4PHOSA1 | INFINEON |
获取价格 |
Insulated Gate Bipolar Transistor, 440A I(C), 1700V V(BR)CES, N-Channel, MODULE-7 |
![]() |
FF300R17ME3 | INFINEON |
获取价格 |
EconoDUAL3 module with trench/fieldstop IGBT3 and EmCon3 diode |
![]() |
FF300R17ME3BOSA1 | INFINEON |
获取价格 |
Insulated Gate Bipolar Transistor, 375A I(C), 1700V V(BR)CES, N-Channel, MODULE-11 |
![]() |
FF300R17ME3ENG | INFINEON |
获取价格 |
暂无描述 |
![]() |
FF300R17ME4 | INFINEON |
获取价格 |
EconoDUAL3 module with trench/fieldstop IGBT4 and Emitter Controlled3 diode |
![]() |
FF300R17ME4_B11 | INFINEON |
获取价格 |
EconoDUAL3 module with trench/fieldstop IGBT4 and Emitter Controlled Diode and PressFIT / |
![]() |
FF300R17ME4B11BOSA1 | INFINEON |
获取价格 |
Insulated Gate Bipolar Transistor, 375A I(C), 1700V V(BR)CES, N-Channel, MODULE-11 |
![]() |
FF300R17ME4BOSA1 | INFINEON |
获取价格 |
Insulated Gate Bipolar Transistor, 375A I(C), 1700V V(BR)CES, N-Channel, MODULE-11 |
![]() |