5秒后页面跳转
FF300R12KT4P PDF预览

FF300R12KT4P

更新时间: 2024-02-18 10:05:06
品牌 Logo 应用领域
英飞凌 - INFINEON
页数 文件大小 规格书
9页 597K
描述
Insulated Gate Bipolar Transistor,

FF300R12KT4P 技术参数

是否Rohs认证: 符合生命周期:Active
包装说明:,Reach Compliance Code:compliant
风险等级:5.55峰值回流温度(摄氏度):NOT SPECIFIED
处于峰值回流温度下的最长时间:NOT SPECIFIEDBase Number Matches:1

FF300R12KT4P 数据手册

 浏览型号FF300R12KT4P的Datasheet PDF文件第2页浏览型号FF300R12KT4P的Datasheet PDF文件第3页浏览型号FF300R12KT4P的Datasheet PDF文件第4页浏览型号FF300R12KT4P的Datasheet PDF文件第5页浏览型号FF300R12KT4P的Datasheet PDF文件第6页浏览型号FF300R12KT4P的Datasheet PDF文件第7页 
TechnischeꢀInformationꢀ/ꢀTechnicalꢀInformation  
IGBT-Modul  
IGBT-Module  
FF300R12KT4P  
62mmꢀC-SerienꢀModulꢀmitꢀschnellemꢀTrench/FeldstoppꢀIGBT4ꢀundꢀEmitterꢀControlledꢀHEꢀDiodeꢀundꢀbereits  
aufgetragenemꢀThermalꢀInterfaceꢀMaterial  
62mmꢀC-SeriesꢀmoduleꢀwithꢀfastꢀTrench/FieldstopꢀIGBT4ꢀandꢀEmitterꢀControlledꢀHEꢀdiodeꢀandꢀpre-applied  
ThermalꢀInterfaceꢀMaterial  
VorläufigeꢀDatenꢀ/ꢀPreliminaryꢀData  
VCES = 1200V  
IC nom = 300A / ICRM = 600A  
TypischeꢀAnwendungen  
• Hochleistungsumrichter  
• Motorantriebe  
TypicalꢀApplications  
• Highꢀpowerꢀconverters  
• Motorꢀdrives  
• USV-Systeme  
• UPSꢀsystems  
• Windgeneratoren  
• Windꢀturbines  
ElektrischeꢀEigenschaften  
• ErweiterteꢀSperrschichttemperaturꢀTvjꢀop  
• NiedrigeꢀSchaltverluste  
ElectricalꢀFeatures  
• ExtendedꢀoperatingꢀtemperatureꢀTvjꢀop  
• Lowꢀswitchingꢀlosses  
• NiedrigesꢀVCEsat  
• LowꢀVCEsat  
• SehrꢀgroßeꢀRobustheit  
• Unbeatableꢀrobustness  
• VCEsatꢀꢀwithꢀpositiveꢀtemperatureꢀcoefficient  
• VCEsatꢀꢀmitꢀpositivemꢀTemperaturkoeffizienten  
MechanischeꢀEigenschaften  
• 4ꢀkVꢀACꢀ1minꢀIsolationsfestigkeit  
• GehäuseꢀmitꢀCTIꢀ>ꢀ400  
MechanicalꢀFeatures  
• 4ꢀkVꢀACꢀ1minꢀinsulation  
• PackageꢀwithꢀCTIꢀ>ꢀ400  
• GroßeꢀLuft-ꢀundꢀKriechstrecken  
• Highꢀcreepageꢀandꢀclearanceꢀdistances  
• Pre-appliedꢀThermalꢀInterfaceꢀMaterial  
Thermisches Interface Material bereits  
aufgetragen  
ModuleꢀLabelꢀCode  
BarcodeꢀCodeꢀ128  
ContentꢀofꢀtheꢀCode  
ModuleꢀSerialꢀNumber  
Digit  
1ꢀ-ꢀꢀꢀ5  
ModuleꢀMaterialꢀNumber  
ProductionꢀOrderꢀNumber  
Datecodeꢀ(ProductionꢀYear)  
Datecodeꢀ(ProductionꢀWeek)  
6ꢀ-ꢀ11  
12ꢀ-ꢀ19  
20ꢀ-ꢀ21  
22ꢀ-ꢀ23  
DMXꢀ-ꢀCode  
preparedꢀby:ꢀAKB  
approvedꢀby:ꢀMK  
dateꢀofꢀpublication:ꢀ2016-04-01  
revision:ꢀV2.0  
ULꢀapprovedꢀ(E83335)  
1

与FF300R12KT4P相关器件

型号 品牌 获取价格 描述 数据表
FF300R12KT4PHOSA1 INFINEON

获取价格

Insulated Gate Bipolar Transistor, 1200V V(BR)CES, N-Channel, MODULE-7
FF300R12ME3 INFINEON

获取价格

EconoDUAL module with trench/fieldstop IGBT3 and EmCon High Efficiency diode
FF300R12ME4 INFINEON

获取价格

EconoDUAL3 module with Trench/Fieldstop IGBT4 and Emitter Controlled HE diode and NTC
FF300R12ME4_B11 INFINEON

获取价格

EconoDUAL3 module with Trench/Fieldstop IGBT4 and Emitter Controlled HE diode and PressFIT
FF300R12ME4B11BPSA1 INFINEON

获取价格

Insulated Gate Bipolar Transistor, 450A I(C), 1200V V(BR)CES, N-Channel, MODULE-11
FF300R12ME4BOSA1 INFINEON

获取价格

Insulated Gate Bipolar Transistor, 450A I(C), 1200V V(BR)CES, N-Channel, MODULE-11
FF300R12ME4P_B11 INFINEON

获取价格

TIM
FF300R12ME7_B11 INFINEON

获取价格

PressFIT
FF300R12MS4 INFINEON

获取价格

EconoDUAL3 module with fast IGBT2 for high switching frequency
FF300R17KE3 INFINEON

获取价格

半桥 62 mm 1700 V 300 A 双开关 IGBT 模块,采用第三代 TRENC