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FDPF20N50 PDF预览

FDPF20N50

更新时间： 2024-11-27 11:15:27
品牌 Logo 应用领域
安森美 - ONSEMI 局域网开关脉冲晶体管
页数 文件大小 规格书
12页 776K
描述
功率 MOSFET，N 沟道，UniFETTM，500 V，20A，230 mΩ，TO-220F

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FDPF20N50 技术参数

是否无铅： 不含铅生命周期：Active
包装说明：TO-220F, 3 PINReach Compliance Code：not_compliant
ECCN代码：EAR99HTS代码：8541.29.00.95
Factory Lead Time：1 week风险等级：5.3
其他特性：AVALANCHE RATED雪崩能效等级（Eas）：1110 mJ
外壳连接：ISOLATED配置：SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压：500 V最大漏极电流 (Abs) (ID)：20 A
最大漏极电流 (ID)：20 A最大漏源导通电阻：0.23 Ω
FET 技术：METAL-OXIDE SEMICONDUCTORJEDEC-95代码：TO-220AB
JESD-30 代码：R-PSFM-T3JESD-609代码：e3
元件数量：1端子数量：3
工作模式：ENHANCEMENT MODE最高工作温度：150 °C
封装主体材料：PLASTIC/EPOXY封装形状：RECTANGULAR
封装形式：FLANGE MOUNT峰值回流温度（摄氏度）：NOT SPECIFIED
极性/信道类型：N-CHANNEL最大功率耗散 (Abs)：62 W
最大脉冲漏极电流 (IDM)：80 A认证状态：Not Qualified
子类别：FET General Purpose Power表面贴装：NO
端子面层：Tin (Sn)端子形式：THROUGH-HOLE
端子位置：SINGLE处于峰值回流温度下的最长时间：NOT SPECIFIED
晶体管应用：SWITCHING晶体管元件材料：SILICON
Base Number Matches：1

FDPF20N50 数据手册

 浏览型号FDPF20N50的Datasheet PDF文件第2页浏览型号FDPF20N50的Datasheet PDF文件第3页浏览型号FDPF20N50的Datasheet PDF文件第4页浏览型号FDPF20N50的Datasheet PDF文件第5页浏览型号FDPF20N50的Datasheet PDF文件第6页浏览型号FDPF20N50的Datasheet PDF文件第7页 
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与FDPF20N50相关器件

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FDPF20N50F FAIRCHILD

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 		Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET
FDPF20N50FT FAIRCHILD

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 		N-Channel UniFETTM FRFET® MOSFET 500 V, 20 A
FDPF20N50FT ONSEMI

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 		功率 MOSFET，N 沟道，UniFETTM，FRFET®，500 V，20 A，260
FDPF20N50T FAIRCHILD

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 		Power Factor Correction Converter Design
FDPF20N50T ONSEMI

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 		功率 MOSFET，N 沟道，UniFETTM，500 V，20A，230 mΩ，TO-2
FDPF24N40 FAIRCHILD

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 		N-Channel MOSFET 400V, 24A, 0.175ヘ
FDPF26N40 FAIRCHILD

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 		N-Channel MOSFET 400V, 26A, 0.16ヘ
FDPF2710T FAIRCHILD

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 		250V N-Channel PowerTrench MOSFET
FDPF2710T ONSEMI

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 		N 沟道，PowerTrench® MOSFET，250V，25A，42.5mΩ
FDPF2D3N10C ONSEMI

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 		N 沟道，屏蔽门极，PowerTrench® MOSFET，100 V，222A，2.3m

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