December 2007
TM
UniFET
FDP24N40 / FDPF24N40
N-Channel MOSFET
400V, 24A, 0.175Ω
Features
Description
•
•
•
•
•
•
•
RDS(on) = 0.140Ω ( Typ.)@ VGS = 10V, ID = 12A
Low gate charge ( Typ. 46nC)
Low Crss ( Typ. 25pF)
These N-Channel enhancement mode power field effect
transistors are produced using Fairchild’s proprietary, planar
stripe, DMOS technology.
This advanced technology has been especially tailored to mini-
mize on-state resistance, provide superior switching perfor-
mance, and withstand high energy pulse in the avalanche and
commutation mode. These devices are well suited for high
efficient switching mode power supplies and active power factor
correction.
Fast switching
100% avalanche tested
Improve dv/dt capability
RoHS compliant
D
G
TO-220F
FDPF Series
TO-220
FDP Series
G D S
G D S
S
MOSFET Maximum Ratings TC = 25oC unless otherwise noted
Symbol
VDSS
VGSS
Parameter
FDP24N40
FDPF24N40
400
Units
Drain to Source Voltage
Gate to Source Voltage
V
V
±30
-Continuous (TC = 25oC)
-Continuous (TC = 100oC)
- P uls ed
24
14.4
96
24*
14.4*
96*
ID
D r a in C u r r e n t
A
IDM
D rai n Cur rent
(Note 1)
(Note 2)
(Note 1)
(Note 1)
(Note 3)
A
mJ
A
EAS
IAR
Single Pulsed Avalanche Energy
Avalanche Current
1296
24
EAR
dv/dt
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
22.7
4.5
mJ
V/ns
W
W/oC
oC
(TC = 25oC)
- Derate above 25oC
227
1.8
40
PD
Power Dissipation
0.3
TJ, TSTG
TL
Operating and Storage Temperature Range
-55 to +150
300
Maximum Lead Temperature for Soldering Purpose,
1/8” from Case for 5 Seconds
oC
*Drain current limited by maximum junction temperature
Thermal Characteristics
Symbol
Parameter
Thermal Resistance, Junction to Case
FDP24N40
Units
FDPF24N40
RθJC
RθCS
RθJA
0.55
0.5
3.0
-
Thermal Resistance, Case to Sink Typ.
Thermal Resistance, Junction to Ambient
oC/W
62.5
62.5
©2007 Fairchild Semiconductor Corporation
FDP24N40 / FDPF24N40 Rev. A
1
www.fairchildsemi.com