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FDPF24N40 PDF预览

FDPF24N40

更新时间: 2024-09-25 03:36:27
品牌 Logo 应用领域
飞兆/仙童 - FAIRCHILD /
页数 文件大小 规格书
9页 280K
描述
N-Channel MOSFET 400V, 24A, 0.175ヘ

FDPF24N40 数据手册

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December 2007  
TM  
UniFET  
FDP24N40 / FDPF24N40  
N-Channel MOSFET  
400V, 24A, 0.175Ω  
Features  
Description  
RDS(on) = 0.140Ω ( Typ.)@ VGS = 10V, ID = 12A  
Low gate charge ( Typ. 46nC)  
Low Crss ( Typ. 25pF)  
These N-Channel enhancement mode power field effect  
transistors are produced using Fairchild’s proprietary, planar  
stripe, DMOS technology.  
This advanced technology has been especially tailored to mini-  
mize on-state resistance, provide superior switching perfor-  
mance, and withstand high energy pulse in the avalanche and  
commutation mode. These devices are well suited for high  
efficient switching mode power supplies and active power factor  
correction.  
Fast switching  
100% avalanche tested  
Improve dv/dt capability  
RoHS compliant  
D
G
TO-220F  
FDPF Series  
TO-220  
FDP Series  
G D S  
G D S  
S
MOSFET Maximum Ratings TC = 25oC unless otherwise noted  
Symbol  
VDSS  
VGSS  
Parameter  
FDP24N40  
FDPF24N40  
400  
Units  
Drain to Source Voltage  
Gate to Source Voltage  
V
V
±30  
-Continuous (TC = 25oC)  
-Continuous (TC = 100oC)  
- P uls ed  
24  
14.4  
96  
24*  
14.4*  
96*  
ID  
D r a in C u r r e n t  
A
IDM  
D rai n Cur rent  
(Note 1)  
(Note 2)  
(Note 1)  
(Note 1)  
(Note 3)  
A
mJ  
A
EAS  
IAR  
Single Pulsed Avalanche Energy  
Avalanche Current  
1296  
24  
EAR  
dv/dt  
Repetitive Avalanche Energy  
Peak Diode Recovery dv/dt  
22.7  
4.5  
mJ  
V/ns  
W
W/oC  
oC  
(TC = 25oC)  
- Derate above 25oC  
227  
1.8  
40  
PD  
Power Dissipation  
0.3  
TJ, TSTG  
TL  
Operating and Storage Temperature Range  
-55 to +150  
300  
Maximum Lead Temperature for Soldering Purpose,  
1/8” from Case for 5 Seconds  
oC  
*Drain current limited by maximum junction temperature  
Thermal Characteristics  
Symbol  
Parameter  
Thermal Resistance, Junction to Case  
FDP24N40  
Units  
FDPF24N40  
RθJC  
RθCS  
RθJA  
0.55  
0.5  
3.0  
-
Thermal Resistance, Case to Sink Typ.  
Thermal Resistance, Junction to Ambient  
oC/W  
62.5  
62.5  
©2007 Fairchild Semiconductor Corporation  
FDP24N40 / FDPF24N40 Rev. A  
1
www.fairchildsemi.com  

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