Datasheet > FDPF3860T

FDPF3860T

更新时间： 2024-09-25 03:36:27

品牌	Logo	应用领域
飞兆/仙童 - FAIRCHILD		晶体晶体管开关脉冲 PC 局域网
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描述
N-Channel PowerTrench㈢ MOSFET 100V, 20A, 38.2mヘ

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FDPF3860T 数据手册

March 2008

FDPF3860T

N-Channel PowerTrench MOSFET

100V, 20A, 38.2mΩ

Description

General Description

•

R_DS(on)= 38.2mΩ ( MAX ) @ V_GS= 10V, I_D= 5.9A

This N-Channel MOSFET is produced using Fairchild Semicon-

ductor’s advanced PowerTrench process that has been espe-

cially tailored to minimize the on-state resistance and yet

maintain superior switching performance.

Fast switching speed

Low gate charge

High performance trench technology for extremely low R_DS(on)

High power and current handling capability

RoHS compliant

Application

•

DC to AC converters / Synchronous Rectification

TO-220F

G D S

MOSFET Maximum Ratings T_C= 25^oC unless otherwise noted

Symbol

V_DSS

V_GSS

Parameter

Ratings

100

Units

Drain to Source Voltage

Gate to Source Voltage

±20

- Continuous (T_C= 25^oC)

- Continuous (T_C= 100^oC)

- Pulsed

I_D

Drain Current

12.7

I_DM

Drain Current

(Note 1)

(Note 2)

(Note 1)

(Note 3)

E_AS

I_AR

Single Pulsed Avalanche Energy

Avalanche Current

278

E_AR

dv/dt

Repetitive Avalanche Energy

Peak Diode Recovery dv/dt

3.4

V/ns

W/^oC

^oC

(T_C= 25^oC)

- Derate above 25^oC

33.8

0.27

-55 to +150

P_D

Power Dissipation

T_J, T_STG

T_L

Operating and Storage Temperature Range

Maximum Lead Temperature for Soldering Purpose,

1/8” from Case for 5 Seconds

300

^oC

Thermal Characteristics

Symbol

Parameter

Thermal Resistance, Junction to Case

Thermal Resistance, Junction to Ambient

Ratings

3.7

Units

R_θJC

R_θJA

^oC/W

62.5

FDPF3860T Rev. A

www.fairchildsemi.com

12 3 4 5 6 7 8

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FDPF3860T 替代型号

型号	品牌	替代类型	描述	数据表
IRF510A	FAIRCHILD	类似代替	Advanced Power MOSFET

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