FDPF33N25

更新时间： 2024-02-15 22:35:10

品牌	Logo	应用领域
飞兆/仙童 - FAIRCHILD		晶体晶体管功率场效应晶体管开关脉冲局域网
页数	文件大小	规格书
8页	833K
描述
250V N-Channel MOSFET

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中文翻译

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技术参数
数据手册
替代型号

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FDPF33N25 技术参数

生命周期：	Transferred	包装说明：	,
Reach Compliance Code：	unknown	风险等级：	5.76
Base Number Matches：	1

FDPF33N25 数据手册

May 2006

UniFET

FDPF33N25

250V N-Channel MOSFET

Features

Description

•

20A, 250V, R_DS(on)= 0.094Ω @V_GS= 10 V

Low gate charge ( typical 36.8 nC)

Low C_rss( typical 39 pF)

These N-Channel enhancement mode power field effect

transistors are produced using Fairchild’s proprietary, planar

stripe, DMOS technology.

This advanced technology has been especially tailored to

minimize on-state resistance, provide superior switching

performance, and withstand high energy pulse in the avalanche

and commutation mode. These devices are well suited for high

efficient switched mode power supplies and active power factor

correction.

Fast switching

100% avalanche tested

Improved dv/dt capability

G D

TO-220F

FDPF Series

Absolute Maximum Ratings

Symbol

Parameter

FDPF33N25

Unit

V_DSS

Drain-Source Voltage

Drain Current

250

I_D

- Continuous (T_C= 25°C)

- Continuous (T_C= 100°C)

(Note 1)

(Note 2)

I_DM

Drain Current

- Pulsed

±30

918

V_GSS

E_AS

I_AR

Gate-Source voltage

Single Pulsed Avalanche Energy

Avalanche Current

(Note 1)

(Note 3)

E_AR

dv/dt

P_D

Repetitive Avalanche Energy

Peak Diode Recovery dv/dt

9.4

4.5

V/ns

Power Dissipation

(T_C= 25°C)

- Derate above 25°C

0.76

W/°C

T_J,T_STG

T_L

Operating and Storage Temperature Range

-55 to +150

300

°C

Maximum Lead Temperature for Soldering Purpose,

1/8” from Case for 5 Seconds

°C

Thermal Characteristics

Symbol

Parameter

Min.

Max.

1.32

Unit

°C/W

R_θJC

R_θJA

Thermal Resistance, Junction-to-Case

Thermal Resistance, Junction-to-Ambient

62.5

FDPF33N25 Rev A

www.fairchildsemi.com

12 3 4 5 6 7 8

中文翻译

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FDPF33N25 替代型号

型号	品牌	替代类型	描述	数据表
FDPF33N25T	FAIRCHILD	功能相似	N-Channel MOSFET

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