5秒后页面跳转
FDPF51N25 PDF预览

FDPF51N25

更新时间: 2024-11-18 03:02:51
品牌 Logo 应用领域
飞兆/仙童 - FAIRCHILD 晶体晶体管功率场效应晶体管开关脉冲局域网
页数 文件大小 规格书
8页 886K
描述
FDPF51N25

FDPF51N25 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Transferred零件包装代码:TO-220F
包装说明:TO-220F, 3 PIN针数:3
Reach Compliance Code:not_compliantECCN代码:EAR99
HTS代码:8541.29.00.95风险等级:3.68
Is Samacsys:N雪崩能效等级(Eas):1111 mJ
外壳连接:ISOLATED配置:SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压:250 V最大漏极电流 (Abs) (ID):28 A
最大漏极电流 (ID):28 A最大漏源导通电阻:0.06 Ω
FET 技术:METAL-OXIDE SEMICONDUCTORJEDEC-95代码:TO-220AB
JESD-30 代码:R-PSFM-T3JESD-609代码:e3
元件数量:1端子数量:3
工作模式:ENHANCEMENT MODE最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:FLANGE MOUNT峰值回流温度(摄氏度):NOT SPECIFIED
极性/信道类型:N-CHANNEL最大功率耗散 (Abs):117 W
最大脉冲漏极电流 (IDM):112 A认证状态:Not Qualified
子类别:FET General Purpose Power表面贴装:NO
端子面层:Matte Tin (Sn)端子形式:THROUGH-HOLE
端子位置:SINGLE处于峰值回流温度下的最长时间:NOT SPECIFIED
晶体管应用:SWITCHING晶体管元件材料:SILICON
Base Number Matches:1

FDPF51N25 数据手册

 浏览型号FDPF51N25的Datasheet PDF文件第2页浏览型号FDPF51N25的Datasheet PDF文件第3页浏览型号FDPF51N25的Datasheet PDF文件第4页浏览型号FDPF51N25的Datasheet PDF文件第5页浏览型号FDPF51N25的Datasheet PDF文件第6页浏览型号FDPF51N25的Datasheet PDF文件第7页 
June 2006  
UniFETTM  
FDPF51N25  
28A, 250V N-Channel MOSFET  
Features  
Description  
RDS(on) = 0.060 Ω @ VGS = 10 V  
Low gate charge ( typical 55 nC)  
Low Crss ( typical 63 pF)  
Fast switching  
These N-Channel enhancement mode power field effect  
transistorsare produced using Fairchild’s proprietary, planar  
stripe, DMOS technology.  
This advanced technology has been especially tailored to  
minimize on-state resistance, provide superior switching  
performance, and withstand high energy pulse in the avalanche  
and commutation mode. These devices are well suited for high  
efficient switched mode power supplies and active power factor  
correction.  
100% avalanche tested  
Improved dv/dt capability  
D
G
S
G
D
TO-220F  
S
FDPF Series  
Absolute Maximum Ratings  
Symbol  
Parameter  
FDPF51N25  
Unit  
VDSS  
Drain-Source Voltage  
Drain Current  
250  
V
ID  
- Continuous (TC = 25°C)  
- Continuous (TC = 100°C)  
28  
16.8  
A
A
(Note 1)  
(Note 2)  
IDM  
Drain Current  
- Pulsed  
112  
±30  
1111  
28  
A
V
VGSS  
EAS  
IAR  
Gate-Source voltage  
Single Pulsed Avalanche Energy  
Avalanche Current  
mJ  
A
(Note 1)  
(Note 1)  
(Note 3)  
EAR  
dv/dt  
PD  
Repetitive Avalanche Energy  
Peak Diode Recovery dv/dt  
11.7  
4.5  
mJ  
V/ns  
Power Dissipation  
(TC = 25°C)  
117  
W
- Derate above 25°C  
0.93  
W/°C  
TJ, TSTG  
TL  
Operating and Storage Temperature Range  
-55 to +150  
300  
°C  
Maximum Lead Temperature for Soldering Purpose,  
1/8” from Case for 5 Seconds  
°C  
Thermal Characteristics  
Symbol  
Parameter  
Min.  
Max.  
1.07  
Unit  
°C/W  
°C/W  
RθJC  
RθJA  
Thermal Resistance, Junction-to-Case  
Thermal Resistance, Junction-to-Ambient  
--  
--  
62.5  
©2006 Fairchild Semiconductor Corporation  
FDPF51N25 Rev. A  
1
www.fairchildsemi.com  

FDPF51N25 替代型号

型号 品牌 替代类型 描述 数据表
FDPF51N25YDTU ONSEMI

功能相似

功率 MOSFET,N 沟道,UniFETTM,250V,51A,60mΩ,TO-220F
FDPF51N25 ONSEMI

功能相似

功率 MOSFET,N 沟道,UniFETTM,250V,51A,60mΩ,TO-220F

与FDPF51N25相关器件

型号 品牌 获取价格 描述 数据表
FDPF51N25RDTU FAIRCHILD

获取价格

Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET
FDPF51N25RDTU ONSEMI

获取价格

N 沟道 UniFETTM MOSFET 250 V,51 A,60 mΩ
FDPF51N25YDTU FAIRCHILD

获取价格

N-Channel UniFETTM MOSFET 250V, 51A, 60mΩ, TO220, MOLDED, 3LD, FULL PACK, EIAJ S
FDPF51N25YDTU ONSEMI

获取价格

功率 MOSFET,N 沟道,UniFETTM,250V,51A,60mΩ,TO-220F
FDPF52N20T FAIRCHILD

获取价格

N-Channel MOSFET 200V, 52A, 0.049ヘ
FDPF55N06 FAIRCHILD

获取价格

60V N-Channel MOSFET
FDPF55N06 ONSEMI

获取价格

功率 MOSFET,N 沟道,UniFETTM,60 V,55 A,22 mΩ,TO-22
FDPF5N50 FAIRCHILD

获取价格

N-Channel MOSFET 500V, 5A, 1.4ヘ
FDPF5N50FT FAIRCHILD

获取价格

N-Channel MOSFET, FRFET 500V, 4.5A, 1.55ヘ
FDPF5N50FT ONSEMI

获取价格

N 沟道 UniFETTM FRFET® MOSFET 500V,4.5A,1.55Ω