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FDPF5N50NZF PDF预览

FDPF5N50NZF

更新时间: 2024-11-18 12:23:39
品牌 Logo 应用领域
飞兆/仙童 - FAIRCHILD 晶体晶体管功率场效应晶体管开关脉冲局域网
页数 文件大小 规格书
9页 272K
描述
N-Channel MOSFET 500V, 4.2A, 1.75Ω

FDPF5N50NZF 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Transferred零件包装代码:TO-220F
包装说明:ROHS COMPLIANT, TO-220F, 3 PIN针数:3
Reach Compliance Code:not_compliantECCN代码:EAR99
HTS代码:8541.29.00.95风险等级:5.69
Is Samacsys:N雪崩能效等级(Eas):165 mJ
外壳连接:ISOLATED配置:SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压:500 V最大漏极电流 (Abs) (ID):4.2 A
最大漏极电流 (ID):4.2 A最大漏源导通电阻:1.75 Ω
FET 技术:METAL-OXIDE SEMICONDUCTORJEDEC-95代码:TO-220AB
JESD-30 代码:R-PSFM-T3JESD-609代码:e3
元件数量:1端子数量:3
工作模式:ENHANCEMENT MODE最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:FLANGE MOUNT峰值回流温度(摄氏度):NOT SPECIFIED
极性/信道类型:N-CHANNEL最大功率耗散 (Abs):30 W
最大脉冲漏极电流 (IDM):16 A认证状态:Not Qualified
子类别:FET General Purpose Power表面贴装:NO
端子面层:Matte Tin (Sn)端子形式:THROUGH-HOLE
端子位置:SINGLE处于峰值回流温度下的最长时间:NOT SPECIFIED
晶体管应用:SWITCHING晶体管元件材料:SILICON
Base Number Matches:1

FDPF5N50NZF 数据手册

 浏览型号FDPF5N50NZF的Datasheet PDF文件第2页浏览型号FDPF5N50NZF的Datasheet PDF文件第3页浏览型号FDPF5N50NZF的Datasheet PDF文件第4页浏览型号FDPF5N50NZF的Datasheet PDF文件第5页浏览型号FDPF5N50NZF的Datasheet PDF文件第6页浏览型号FDPF5N50NZF的Datasheet PDF文件第7页 
February 2012  
UniFET-IITM  
FDP5N50NZF / FDPF5N50NZF  
N-Channel MOSFET  
500V, 4.2A, 1.75Ω  
Features  
Description  
RDS(on) = 1.57Ω ( Typ.)@ VGS = 10V, ID = 2.1A  
Low Gate Charge ( Typ. 9nC)  
Low Crss ( Typ. 4pF)  
These N-Channel enhancement mode power field effect transis-  
tors are produced using Fairchild’s proprietary, planar stripe,  
DMOS technology.  
This advance technology has been especially tailored to mini-  
mize on-state resistance, provide superior switching perfor-  
mance, and withstand high energy pulse in the avalanche and  
commutation mode. These devices are well suited for high effi-  
cient switching mode power supplies and active power factor  
correction.  
Fast Switching  
100% Avalanche Tested  
Improved dv/dt Capability  
ESD Imoroved Capability  
RoHS Compliant  
D
G
TO-220F  
FDPF Series  
(potted)  
TO-220  
FDP Series  
G D S  
G D S  
S
MOSFET Maximum Ratings TC = 25oC unless otherwise noted*  
Symbol  
VDSS  
VGSS  
Parameter  
FDP5N50NZF  
FDPF5N50NZF  
Units  
Drain to Source Voltage  
Gate to Source Voltage  
500  
±25  
V
V
-Continuous (TC = 25oC)  
-Continuous (TC = 100oC)  
4.2  
2.5  
16  
4.2*  
2.5*  
16*  
ID  
Drain Current  
Drain Current  
A
IDM  
- Pulsed  
(Note 1)  
A
mJ  
A
EAS  
IAR  
Single Pulsed Avalanche Energy  
Avalanche Current  
(Note 2)  
( Note 1)  
(Note 1)  
165  
4.2  
7.8  
20  
EAR  
dv/dt  
Repetitive Avalanche Energy  
mJ  
V/ns  
W
W/oC  
oC  
Peak Diode Recovery dv/dt  
(Note 3)  
(TC = 25oC)  
- Derate above 25oC  
Operating and Storage Temperature Range  
78  
30  
PD  
Power Dissipation  
0.62  
0.24  
TJ, TSTG  
TL  
-55 to +150  
300  
Maximum Lead Temperature for Soldering Purpose,  
1/8” from Case for 5 Seconds  
oC  
*Drain current limited by maximum junction temperature  
Thermal Characteristics  
Symbol  
RθJC  
Parameter  
Units  
FDP5N50NZF  
FDPF5N50NZF  
Thermal Resistance, Junction to Case  
Thermal Resistance, Case to Heat Sink Typ.  
Thermal Resistance, Junction to Ambient  
1.6  
0.5  
4.1  
-
RθCS  
RθJA  
oC/W  
62.5  
62.5  
©2012 Fairchild Semiconductor Corporation  
FDP5N50NZF / FDPF5N50NZF Rev. C0  
1
www.fairchildsemi.com  

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