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FDPF8D5N10C PDF预览

FDPF8D5N10C

更新时间： 2024-11-19 11:14:07
品牌 Logo 应用领域
安森美 - ONSEMI /
页数 文件大小 规格书
8页 1016K
描述
N 沟道，屏蔽门极，PowerTrench® MOSFET，100V，76A，8.5mΩ

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中文翻译

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FDPF8D5N10C 数据手册

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ON Semiconductor  
Is Now  
To learn more about onsemi™, please visit our website at  
www.onsemi.com  
onsemi andꢀꢀꢀꢀꢀꢀꢀand other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba “onsemi” or its affiliates and/or  
subsidiaries in the United States and/or other countries. onsemi owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of onsemi  
product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. onsemi reserves the right to make changes at any time to any products or information herein, without  
notice. The information herein is provided “as-is” and onsemi makes no warranty, representation or guarantee regarding the accuracy of the information, product features, availability, functionality,  
or suitability of its products for any particular purpose, nor does onsemi assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all  
liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using onsemi products, including compliance with all laws,  
regulations and safety requirements or standards, regardless of any support or applications information provided by onsemi. “Typical” parameters which may be provided in onsemi data sheets and/  
or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application  
by customer’s technical experts. onsemi does not convey any license under any of its intellectual property rights nor the rights of others. onsemi products are not designed, intended, or authorized  
for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for  
implantation in the human body. Should Buyer purchase or use onsemi products for any such unintended or unauthorized application, Buyer shall indemnify and holdonsemi and its officers, employees,  
subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death  
associated with such unintended or unauthorized use, even if such claim alleges that onsemi was negligent regarding the design or manufacture of the part. onsemi is an Equal Opportunity/Affirmative  
Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. Other names and brands may be claimed as the property of others.  
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 		Power Field-Effect Transistor, 8A I(D), 500V, 0.85ohm, 1-Element, N-Channel, Silicon, Meta
FDPF8N50NZ ONSEMI

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 		功率 MOSFET，N 沟道，UniFETTM II，500 V，8 A，850 mΩ，T
FDPF8N50NZF FAIRCHILD

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 		N-Channel MOSFET 500V, 7A, 1Ω
FDPF8N50NZF ONSEMI

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 		功率 MOSFET，N 沟道，UniFETTM II，FRFET®，500 V，7 A，1
FDPF8N50NZT FAIRCHILD

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 		N-Channel UniFET II MOSFET
FDPF8N50NZU FAIRCHILD

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 		Power Field-Effect Transistor, 6.5A I(D), 500V, 1.2ohm, 1-Element, N-Channel, Silicon, Met
FDPF8N50NZU ONSEMI

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 		功率 MOSFET，N 沟道，UniFETTM II，Ultra FRFETTM，500
FDPF8N60ZUT FAIRCHILD

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 		N-Channel MOSFET, FRFET 600V, 6.5A, 1.35Ω
FDPF8N60ZUT ONSEMI

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 		功率 MOSFET，N 沟道，UniFETTM，Ultra FRFETTM，600 V，6
FDPS09H04A_F085A FAIRCHILD

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 		Power Supply Support Circuit, Fixed, 1 Channel, PSFM7, ROHS COMPLIANT, TO220-7

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