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FDPF8N50NZT PDF预览

FDPF8N50NZT

更新时间: 2024-11-18 12:35:07
品牌 Logo 应用领域
飞兆/仙童 - FAIRCHILD 晶体晶体管功率场效应晶体管开关脉冲局域网
页数 文件大小 规格书
10页 379K
描述
N-Channel UniFET II MOSFET

FDPF8N50NZT 技术参数

是否Rohs认证: 符合生命周期:Obsolete
零件包装代码:TO-220AB包装说明:FLANGE MOUNT, R-PSFM-T3
针数:3Reach Compliance Code:unknown
风险等级:5.81Is Samacsys:N
雪崩能效等级(Eas):122 mJ外壳连接:ISOLATED
配置:SINGLE WITH BUILT-IN DIODE最小漏源击穿电压:500 V
最大漏极电流 (Abs) (ID):8 A最大漏极电流 (ID):8 A
最大漏源导通电阻:0.85 ΩFET 技术:METAL-OXIDE SEMICONDUCTOR
JEDEC-95代码:TO-220ABJESD-30 代码:R-PSFM-T3
JESD-609代码:e3元件数量:1
端子数量:3工作模式:ENHANCEMENT MODE
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:FLANGE MOUNT
峰值回流温度(摄氏度):NOT SPECIFIED极性/信道类型:N-CHANNEL
最大功率耗散 (Abs):50 W最大脉冲漏极电流 (IDM):30 A
认证状态:Not Qualified子类别:FET General Purpose Power
表面贴装:NO端子面层:Matte Tin (Sn)
端子形式:THROUGH-HOLE端子位置:SINGLE
处于峰值回流温度下的最长时间:NOT SPECIFIED晶体管应用:SWITCHING
晶体管元件材料:SILICONBase Number Matches:1

FDPF8N50NZT 数据手册

 浏览型号FDPF8N50NZT的Datasheet PDF文件第2页浏览型号FDPF8N50NZT的Datasheet PDF文件第3页浏览型号FDPF8N50NZT的Datasheet PDF文件第4页浏览型号FDPF8N50NZT的Datasheet PDF文件第5页浏览型号FDPF8N50NZT的Datasheet PDF文件第6页浏览型号FDPF8N50NZT的Datasheet PDF文件第7页 
April 2013  
FDP8N50NZ / FDPF8N50NZ  
TM  
N-Channel UniFET II MOSFET  
500 V, 8 A, 850 m  
Features  
Description  
RDS(on) = 770 m(Typ.) @ VGS = 10 V, ID = 4 A  
Low Gate Charge (Typ. 14 nC)  
Low Crss (Typ. 5 pF)  
UniFETTM II MOSFET is Fairchild Semiconductor®’s high  
voltage MOSFET family based on advanced planar stripe and  
DMOS technology. This advanced MOSFET family has the  
smallest on-state resistance among the planar MOSFET, and  
also provides superior switching performance and higher  
avalanche energy strength. In addition, internal gate-source ESD  
diode allows UniFET II MOSFET to withstand over 2kV HBM  
surge stress. This device family is suitable for switching power  
converter applications such as power factor correction (PFC), flat  
panel display (FPD) TV power, ATX and electronic lamp ballasts.  
100% Avalanche Tested  
Improve dv/dt Capability  
ESD Improved Capability  
RoHS Compliant  
Applications  
LCD/LED TV  
Lighting  
Uninterruptible Power Supply  
AC-DC Power Supply  
D
G
G
G
D
S
D
TO-220  
TO-220F  
S
S
MOSFET Maximum Ratings TC = 25oC unless otherwise noted  
Symbol  
VDSS  
VGSS  
Parameter  
FDP8N50NZ FDPF8N50NZ  
Unit  
V
Drain to Source Voltage  
Gate to Source Voltage  
500  
±25  
V
- Continuous (TC = 25oC)  
- Continuous (TC = 100oC)  
- Pulsed  
8
8*  
ID  
Drain Current  
A
4.8  
32  
4.8*  
32*  
IDM  
Drain Current  
(Note 1)  
(Note 2)  
(Note 1)  
(Note 1)  
(Note 3)  
A
mJ  
A
EAS  
IAR  
Single Pulsed Avalanche Energy  
Avalanche Current  
122  
8
EAR  
dv/dt  
Repetitive Avalanche Energy  
Peak Diode Recovery dv/dt  
13  
10  
mJ  
V/ns  
W
W/oC  
oC  
(TC = 25oC)  
- Derate above 25oC  
130  
1
40.3  
0.3  
PD  
Power Dissipation  
TJ, TSTG  
TL  
Operating and Storage Temperature Range  
-55 to +150  
Maximum Lead Temperature for Soldering Purpose,  
1/8” from Case for 5 Seconds  
300  
oC  
*Drain current limited by maximum junction temperature  
Thermal Characteristics  
Symbol  
RJC  
Parameter  
FDP8N50NZ FDPF8N50NZ  
Unit  
Thermal Resistance, Junction to Case, Max.  
Thermal Resistance, Case to Sink, Typ.  
0.96  
0.5  
3.1  
-
RCS  
RJA  
oC/W  
Thermal Resistance, Junction to Ambient, Max.  
62.5  
62.5  
1
www.fairchildsemi.com  
©2010 Fairchild Semiconductor Corporation  
FDP8N50NZ/ FDPF8N50NZ Rev.C1  

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