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FDPF8N60ZUT PDF预览

FDPF8N60ZUT

更新时间: 2024-11-18 06:59:07
品牌 Logo 应用领域
飞兆/仙童 - FAIRCHILD 晶体晶体管开关脉冲局域网
页数 文件大小 规格书
9页 536K
描述
N-Channel MOSFET, FRFET 600V, 6.5A, 1.35Ω

FDPF8N60ZUT 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Transferred零件包装代码:TO-220F
包装说明:ROHS COMPLIANT, TO-220F, 3 PIN针数:3
Reach Compliance Code:not_compliantECCN代码:EAR99
HTS代码:8541.29.00.95风险等级:4.55
雪崩能效等级(Eas):420 mJ外壳连接:ISOLATED
配置:SINGLE WITH BUILT-IN DIODE最小漏源击穿电压:600 V
最大漏极电流 (Abs) (ID):6.5 A最大漏极电流 (ID):6.5 A
最大漏源导通电阻:1.35 ΩFET 技术:METAL-OXIDE SEMICONDUCTOR
JEDEC-95代码:TO-220ABJESD-30 代码:R-PSFM-T3
JESD-609代码:e3元件数量:1
端子数量:3工作模式:ENHANCEMENT MODE
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:FLANGE MOUNT
峰值回流温度(摄氏度):NOT SPECIFIED极性/信道类型:N-CHANNEL
最大功率耗散 (Abs):34.5 W最大脉冲漏极电流 (IDM):26 A
认证状态:Not Qualified子类别:FET General Purpose Power
表面贴装:NO端子面层:Matte Tin (Sn)
端子形式:THROUGH-HOLE端子位置:SINGLE
处于峰值回流温度下的最长时间:NOT SPECIFIED晶体管应用:SWITCHING
晶体管元件材料:SILICON

FDPF8N60ZUT 数据手册

 浏览型号FDPF8N60ZUT的Datasheet PDF文件第2页浏览型号FDPF8N60ZUT的Datasheet PDF文件第3页浏览型号FDPF8N60ZUT的Datasheet PDF文件第4页浏览型号FDPF8N60ZUT的Datasheet PDF文件第5页浏览型号FDPF8N60ZUT的Datasheet PDF文件第6页浏览型号FDPF8N60ZUT的Datasheet PDF文件第7页 
April 2009  
UniFETTM  
FDP8N60ZU / FDPF8N60ZUT  
N-Channel MOSFET, FRFET  
600V, 6.5A, 1.35Ω  
Features  
Description  
RDS(on) = 1.15mΩ ( Typ.) @ VGS = 10V, ID = 3.25A  
Low gate charge ( Typ. 20nC)  
Low Crss ( Typ. 10pF)  
These N-Channel enhancement mode power field effect  
transistors are produced using Fairchild’s proprietary, planar  
stripe, DMOS technology.  
This advanced technology has been especially tailored to  
minimize on-state resistance, provide superior switching  
performance, and withstand high energy pulse in the avalanche  
and commutation mode. These devices are well suited for high  
efficient switched mode power supplies and active power factor  
correction.  
Fast switching  
100% avalanche tested  
Improved dv/dt capability  
RoHS compliant  
D
G
TO-220F  
FDPF Series  
TO-220  
FDP Series  
G D S  
G
D S  
S
MOSFET Maximum Ratings TC = 25oC unless otherwise noted*  
Symbol  
VDSS  
VGSS  
Parameter  
FDP8N60ZU  
FDPF8N60ZUT Units  
Drain to Source Voltage  
Gate to Source Voltage  
600  
V
V
±30  
-Continuous (TC = 25oC)  
-Continuous (TC = 100oC)  
- Pulsed  
6.5  
3.9  
26  
6.5*  
3.9*  
26*  
ID  
Drain Current  
A
IDM  
Drain Current  
(Note 1)  
(Note 2)  
(Note 1)  
(Note 1)  
(Note 3)  
A
mJ  
A
EAS  
IAR  
Single Pulsed Avalanche Energy  
Avalanche Current  
420  
6.5  
EAR  
dv/dt  
Repetitive Avalanche Energy  
Peak Diode Recovery dv/dt  
13.5  
20  
mJ  
V/ns  
W
W/oC  
oC  
(TC = 25oC)  
- Derate above 25oC  
135  
34.5  
0.28  
PD  
Power Dissipation  
1.05  
TJ, TSTG  
TL  
Operating and Storage Temperature Range  
-55 to +150  
300  
Maximum Lead Temperature for Soldering Purpose,  
1/8” from Case for 5 Seconds  
oC  
*Drain current limited by maximum junction temperature  
Thermal Characteristics  
Symbol  
RθJC  
Parameter  
Units  
FDP8N60ZU  
0.95  
FDPF8N60ZUT  
Thermal Resistance, Junction to Case  
Thermal Resistance, Case to Sink Typ.  
Thermal Resistance, Junction to Ambient  
3.6  
-
RθCS  
RθJA  
0.5  
oC/W  
62.5  
62.5  
©2009 Fairchild Semiconductor Corporation  
FDP8N60ZU / FDPF8N60ZUT Rev. A  
1
www.fairchildsemi.com  

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