Datasheet > FDPF6N60ZUT_12

FDPF6N60ZUT_12

更新时间： 2024-11-18 12:23:39

品牌	Logo	应用领域
飞兆/仙童 - FAIRCHILD		/
页数	文件大小	规格书
9页	291K
描述
N-Channel MOSFET, FRFET 600V, 4.5A, 2Î©

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

FDPF6N60ZUT_12 数据手册

April 2012

UniFE^TM

FDP6N60ZU / FDPF6N60ZUT

N-Channel MOSFET, FRFET

600V, 4.5A, 2Ω

Features

Description

•

R_DS(on)= 1.7Ω ( Typ.) @ V_GS= 10V, I_D= 2.25A

Low gate charge ( Typ. 14.5nC)

Low C_rss( Typ. 5pF)

These N-Channel enhancement mode power field effect

transistors are produced using Fairchild’s proprietary, planar

stripe, DMOS technology.

This advanced technology has been especially tailored to

minimize on-state resistance, provide superior switching

performance, and withstand high energy pulse in the avalanche

and commutation mode. These devices are well suited for high

efficient switched mode power supplies and active power factor

correction.

Fast switching

100% avalanche tested

Improved dv/dt capability

RoHS compliant

TO-220F

FDPF Series

TO-220

FDP Series

G D S

D S

MOSFET Maximum Ratings T_C= 25^oC unless otherwise noted*

Symbol

V_DSS

V_GSS

Parameter

FDP6N60ZU

FDPF6N60ZUT Units

Drain to Source Voltage

Gate to Source Voltage

600

±30

-Continuous (T_C= 25^oC)

-Continuous (T_C= 100^oC)

- Pulsed

4.5

2.7

4.5*

2.7*

18*

I_D

Drain Current

I_DM

Drain Current

(Note 1)

(Note 2)

(Note 1)

(Note 3)

E_AS

I_AR

Single Pulsed Avalanche Energy

Avalanche Current

150

4.5

E_AR

dv/dt

Repetitive Avalanche Energy

Peak Diode Recovery dv/dt

10.5

V/ns

W/^oC

^oC

(T_C= 25^oC)

- Derate above 25^oC

105

33.8

0.27

P_D

Power Dissipation

0.85

T_J, T_STG

T_L

Operating and Storage Temperature Range

-55 to +150

300

Maximum Lead Temperature for Soldering Purpose,

1/8” from Case for 5 Seconds

^oC

*Drain current limited by maximum junction temperature

Thermal Characteristics

Symbol

R_θJC

Parameter

Units

FDP6N60ZU

FDPF6N60ZUT

Thermal Resistance, Junction to Case

Thermal Resistance, Case to Sink Typ.

Thermal Resistance, Junction to Ambient

1.2

0.5

3.7

R_θCS

R_θJA

^oC/W

62.5

FDP6N60ZU / FDPF6N60ZUT Rev. C0

www.fairchildsemi.com

12 3 4 5 6 7...9

中文翻译

下载PDF

与FDPF6N60ZUT_12相关器件

型号	品牌	获取价格	描述	数据表
FDPF770N15A	FAIRCHILD	获取价格	N-Channel PowerTrenchÂ® MOSFET 150V, 10A, 77m
FDPF770N15A	ONSEMI	获取价格	N 沟道，PowerTrench® MOSFET，150V，10A，77mΩ
FDPF79N15	FAIRCHILD	获取价格	150V N-Channel MOSFET
FDPF7N50	FAIRCHILD	获取价格	500V N-Channel MOSFET
FDPF7N50F	FAIRCHILD	获取价格	N-Channel MOSFET, FRFET 500V, 6A, 1.15OHM
FDPF7N50U	FAIRCHILD	获取价格	500V N-Channel MOSFET
FDPF7N50U_G	FAIRCHILD	获取价格	Power Field-Effect Transistor, 5A I(D), 500V, 1.5ohm, 1-Element, N-Channel, Silicon, Metal
FDPF7N50U-G	ONSEMI	获取价格	功率 MOSFET，N 沟道，UniFETTM，Ultra FRFETTM， 500 V，
FDPF7N60NZ	FAIRCHILD	获取价格	N-Channel MOSFET 600V, 6.5A, 1.25ï
FDPF7N60NZ	ONSEMI	获取价格	功率 MOSFET，N 沟道，UniFETTM II，600 V，6.5 A，1.25Ω，