Datasheet > FDPF7N50U-G

FDPF7N50U-G

更新时间： 2024-11-19 11:11:35

品牌	Logo	应用领域
安森美 - ONSEMI		/
页数	文件大小	规格书
9页	920K
描述
功率 MOSFET，N 沟道，UniFETTM，Ultra FRFETTM， 500 V，5A，1.5Ω，TO-220F

阅读下载

中文翻译

获取价格

技术参数
数据手册

如果您发现信息不准确，欢迎纠错

FDPF7N50U-G 技术参数

是否无铅：	不含铅	生命周期：	Active
包装说明：	,	Reach Compliance Code：	unknown
风险等级：	2.11	配置：	Single
最大漏极电流 (Abs) (ID)：	5 A	FET 技术：	METAL-OXIDE SEMICONDUCTOR
工作模式：	ENHANCEMENT MODE	最高工作温度：	150 °C
极性/信道类型：	N-CHANNEL	最大功率耗散 (Abs)：	31.3 W
子类别：	FET General Purpose Power	表面贴装：	NO
Base Number Matches：	1

FDPF7N50U-G 数据手册

ON Semiconductor

Is Now

To learn more about onsemi™, please visit our website at

www.onsemi.com

onsemi andꢀꢀꢀꢀꢀꢀꢀand other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba “onsemi” or its affiliates and/or

subsidiaries in the United States and/or other countries. onsemi owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of onsemi

product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. onsemi reserves the right to make changes at any time to any products or information herein, without

notice. The information herein is provided “as-is” and onsemi makes no warranty, representation or guarantee regarding the accuracy of the information, product features, availability, functionality,

or suitability of its products for any particular purpose, nor does onsemi assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all

liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using onsemi products, including compliance with all laws,

regulations and safety requirements or standards, regardless of any support or applications information provided by onsemi. “Typical” parameters which may be provided in onsemi data sheets and/

or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application

by customer’s technical experts. onsemi does not convey any license under any of its intellectual property rights nor the rights of others. onsemi products are not designed, intended, or authorized

for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for

implantation in the human body. Should Buyer purchase or use onsemi products for any such unintended or unauthorized application, Buyer shall indemnify and holdonsemi and its officers, employees,

subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death

associated with such unintended or unauthorized use, even if such claim alleges that onsemi was negligent regarding the design or manufacture of the part. onsemi is an Equal Opportunity/Affirmative

Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. Other names and brands may be claimed as the property of others.

12 3 4 5 6 7...9

中文翻译

下载PDF

与FDPF7N50U-G相关器件

型号	品牌	获取价格	描述	数据表
FDPF7N60NZ	FAIRCHILD	获取价格	N-Channel MOSFET 600V, 6.5A, 1.25ï
FDPF7N60NZ	ONSEMI	获取价格	功率 MOSFET，N 沟道，UniFETTM II，600 V，6.5 A，1.25Ω，
FDPF7N60NZT	FAIRCHILD	获取价格	暂无描述
FDPF7N60NZT	ONSEMI	获取价格	功率 MOSFET，N 沟道，UniFETTM II，600 V，6.5 A，1.25Ω，
FDPF8D5N10C	ONSEMI	获取价格	N 沟道，屏蔽门极，PowerTrench® MOSFET，100V，76A，8.5mΩ
FDPF8N50NZ	FAIRCHILD	获取价格	Power Field-Effect Transistor, 8A I(D), 500V, 0.85ohm, 1-Element, N-Channel, Silicon, Meta
FDPF8N50NZ	ONSEMI	获取价格	功率 MOSFET，N 沟道，UniFETTM II，500 V，8 A，850 mΩ，T
FDPF8N50NZF	FAIRCHILD	获取价格	N-Channel MOSFET 500V, 7A, 1Î©
FDPF8N50NZF	ONSEMI	获取价格	功率 MOSFET，N 沟道，UniFETTM II，FRFET®，500 V，7 A，1
FDPF8N50NZT	FAIRCHILD	获取价格	N-Channel UniFET II MOSFET

与FDPF7N50U-G相关文章

解析光耦仿真器：升级光耦合器技术的必要性
2024-11-18

17
英伟达新一代Blackwell GPU过热问题致交付延迟
2024-11-18

12
国产厂商思特威CMOS图像传感器芯片单月出货超1亿颗，技术创新引领行业发展
2024-11-14

42
台积电5nm和3nm产能利用率达100%，半导体行业景气度持续攀升
2024-11-14

37

产品中心

服务支持

精选活动

关于我们

帮助中心

FDPF7N50U-G

FDPF7N50U-G 技术参数

FDPF7N50U-G 数据手册

与FDPF7N50U-G相关器件

与FDPF7N50U-G相关文章

您还可以找

产品中心

服务支持

精选活动

关于我们

帮助中心

FDPF7N50U-G

FDPF7N50U-G 技术参数

FDPF7N50U-G 数据手册

与FDPF7N50U-G相关器件

与FDPF7N50U-G相关文章

您还可以找

您在本页遇到什么问题？