Datasheet > FDPF7N60NZ

FDPF7N60NZ

更新时间： 2024-11-19 11:11:27

品牌	Logo	应用领域
安森美 - ONSEMI		局域网 PC 开关脉冲晶体管
页数	文件大小	规格书
11页	728K
描述
功率 MOSFET，N 沟道，UniFETTM II，600 V，6.5 A，1.25Ω，TO-220F

阅读下载

中文翻译

获取价格

技术参数
数据手册

如果您发现信息不准确，欢迎纠错

FDPF7N60NZ 技术参数

是否无铅：	不含铅	生命周期：	Active
包装说明：	FLANGE MOUNT, R-PSFM-T3	Reach Compliance Code：	not_compliant
ECCN代码：	EAR99	HTS代码：	8541.29.00.95
Factory Lead Time：	10 weeks	风险等级：	1.29
Samacsys Confidence：	3	Samacsys Status：	Released
Samacsys PartID：	1948662	Samacsys Pin Count：	3
Samacsys Part Category：	MOSFET (N-Channel)	Samacsys Package Category：	Transistor Outline, Vertical
Samacsys Footprint Name：	FDPF7N60NZ	Samacsys Released Date：	2019-03-29 16:39:48
Is Samacsys：	N	雪崩能效等级（Eas）：	275 mJ
外壳连接：	ISOLATED	配置：	SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压：	600 V	最大漏极电流 (Abs) (ID)：	6.5 A
最大漏极电流 (ID)：	6.5 A	最大漏源导通电阻：	1.25 Ω
FET 技术：	METAL-OXIDE SEMICONDUCTOR	JEDEC-95代码：	TO-220AB
JESD-30 代码：	R-PSFM-T3	JESD-609代码：	e3
元件数量：	1	端子数量：	3
工作模式：	ENHANCEMENT MODE	最高工作温度：	150 °C
封装主体材料：	PLASTIC/EPOXY	封装形状：	RECTANGULAR
封装形式：	FLANGE MOUNT	峰值回流温度（摄氏度）：	NOT SPECIFIED
极性/信道类型：	N-CHANNEL	最大功率耗散 (Abs)：	33 W
最大脉冲漏极电流 (IDM)：	26 A	认证状态：	Not Qualified
子类别：	FET General Purpose Power	表面贴装：	NO
端子面层：	Tin (Sn)	端子形式：	THROUGH-HOLE
端子位置：	SINGLE	处于峰值回流温度下的最长时间：	NOT SPECIFIED
晶体管应用：	SWITCHING	晶体管元件材料：	SILICON
Base Number Matches：	1

FDPF7N60NZ 数据手册

Is Now Part of

To learn more about ON Semiconductor, please visit our website at

www.onsemi.com

Please note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers

will need to change in order to meet ON Semiconductor’s system requirements. Since the ON Semiconductor

product management systems do not have the ability to manage part nomenclature that utilizes an underscore

(_), the underscore (_) in the Fairchild part numbers will be changed to a dash (-). This document may contain

device numbers with an underscore (_). Please check the ON Semiconductor website to verify the updated

device numbers. The most current and up-to-date ordering information can be found at www.onsemi.com. Please

email any questions regarding the system integration to Fairchild_questions@onsemi.com.

ON Semiconductor and the ON Semiconductor logo are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number

of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. ON Semiconductor reserves the right

to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability

arising out of the application or use of any product or circuit, and speciﬁcally disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using ON

Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON

Semiconductor data sheets and/or speciﬁcations can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s

technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA

Class 3 medical devices or medical devices with a same or similar classiﬁcation in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended

or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its ofﬁcers, employees, subsidiaries, afﬁliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out

of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor

is an Equal Opportunity/Afﬁrmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.

12 3 4 5 6 7...11

中文翻译

下载PDF

与FDPF7N60NZ相关器件

型号	品牌	获取价格	描述	数据表
FDPF7N60NZT	FAIRCHILD	获取价格	暂无描述
FDPF7N60NZT	ONSEMI	获取价格	功率 MOSFET，N 沟道，UniFETTM II，600 V，6.5 A，1.25Ω，
FDPF8D5N10C	ONSEMI	获取价格	N 沟道，屏蔽门极，PowerTrench® MOSFET，100V，76A，8.5mΩ
FDPF8N50NZ	FAIRCHILD	获取价格	Power Field-Effect Transistor, 8A I(D), 500V, 0.85ohm, 1-Element, N-Channel, Silicon, Meta
FDPF8N50NZ	ONSEMI	获取价格	功率 MOSFET，N 沟道，UniFETTM II，500 V，8 A，850 mΩ，T
FDPF8N50NZF	FAIRCHILD	获取价格	N-Channel MOSFET 500V, 7A, 1Î©
FDPF8N50NZF	ONSEMI	获取价格	功率 MOSFET，N 沟道，UniFETTM II，FRFET®，500 V，7 A，1
FDPF8N50NZT	FAIRCHILD	获取价格	N-Channel UniFET II MOSFET
FDPF8N50NZU	FAIRCHILD	获取价格	Power Field-Effect Transistor, 6.5A I(D), 500V, 1.2ohm, 1-Element, N-Channel, Silicon, Met
FDPF8N50NZU	ONSEMI	获取价格	功率 MOSFET，N 沟道，UniFETTM II，Ultra FRFETTM，500

与FDPF7N60NZ相关文章

解析光耦仿真器：升级光耦合器技术的必要性
2024-11-18

17
英伟达新一代Blackwell GPU过热问题致交付延迟
2024-11-18

12
国产厂商思特威CMOS图像传感器芯片单月出货超1亿颗，技术创新引领行业发展
2024-11-14

42
台积电5nm和3nm产能利用率达100%，半导体行业景气度持续攀升
2024-11-14

37

产品中心

服务支持

精选活动

关于我们

帮助中心

FDPF7N60NZ

FDPF7N60NZ 技术参数

FDPF7N60NZ 数据手册

与FDPF7N60NZ相关器件

与FDPF7N60NZ相关文章

您还可以找

产品中心

服务支持

精选活动

关于我们

帮助中心

FDPF7N60NZ

FDPF7N60NZ 技术参数

FDPF7N60NZ 数据手册

与FDPF7N60NZ相关器件

与FDPF7N60NZ相关文章

您还可以找

您在本页遇到什么问题？