Datasheet > FDPF7N60NZT

FDPF7N60NZT

更新时间： 2024-09-27 11:11:27

品牌	Logo	应用领域
安森美 - ONSEMI		/
页数	文件大小	规格书
11页	728K
描述
功率 MOSFET，N 沟道，UniFETTM II，600 V，6.5 A，1.25Ω，TO-220F

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FDPF7N60NZT 技术参数

是否无铅：	不含铅	生命周期：	Active
包装说明：	,	Reach Compliance Code：	not_compliant
ECCN代码：	EAR99	HTS代码：	8541.29.00.95
Factory Lead Time：	4 weeks	风险等级：	1.3
Is Samacsys：	N	配置：	Single
最大漏极电流 (Abs) (ID)：	6.5 A	FET 技术：	METAL-OXIDE SEMICONDUCTOR
JESD-609代码：	e3	最高工作温度：	150 °C
峰值回流温度（摄氏度）：	NOT SPECIFIED	极性/信道类型：	N-CHANNEL
最大功率耗散 (Abs)：	33 W	子类别：	FET General Purpose Power
表面贴装：	NO	端子面层：	Tin (Sn)
处于峰值回流温度下的最长时间：	NOT SPECIFIED	Base Number Matches：	1

FDPF7N60NZT 数据手册

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与FDPF7N60NZT相关器件

型号	品牌	获取价格	描述	数据表
FDPF8D5N10C	ONSEMI	获取价格	N 沟道，屏蔽门极，PowerTrench® MOSFET，100V，76A，8.5mΩ
FDPF8N50NZ	FAIRCHILD	获取价格	Power Field-Effect Transistor, 8A I(D), 500V, 0.85ohm, 1-Element, N-Channel, Silicon, Meta
FDPF8N50NZ	ONSEMI	获取价格	功率 MOSFET，N 沟道，UniFETTM II，500 V，8 A，850 mΩ，T
FDPF8N50NZF	FAIRCHILD	获取价格	N-Channel MOSFET 500V, 7A, 1Î©
FDPF8N50NZF	ONSEMI	获取价格	功率 MOSFET，N 沟道，UniFETTM II，FRFET®，500 V，7 A，1
FDPF8N50NZT	FAIRCHILD	获取价格	N-Channel UniFET II MOSFET
FDPF8N50NZU	FAIRCHILD	获取价格	Power Field-Effect Transistor, 6.5A I(D), 500V, 1.2ohm, 1-Element, N-Channel, Silicon, Met
FDPF8N50NZU	ONSEMI	获取价格	功率 MOSFET，N 沟道，UniFETTM II，Ultra FRFETTM，500
FDPF8N60ZUT	FAIRCHILD	获取价格	N-Channel MOSFET, FRFET 600V, 6.5A, 1.35Ω
FDPF8N60ZUT	ONSEMI	获取价格	功率 MOSFET，N 沟道，UniFETTM，Ultra FRFETTM，600 V，6

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