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FDPF7N60NZ PDF预览

FDPF7N60NZ

更新时间: 2024-09-26 12:23:39
品牌 Logo 应用领域
飞兆/仙童 - FAIRCHILD 晶体晶体管功率场效应晶体管开关脉冲PC局域网
页数 文件大小 规格书
10页 285K
描述
N-Channel MOSFET 600V, 6.5A, 1.25

FDPF7N60NZ 技术参数

是否无铅:不含铅是否Rohs认证:符合
生命周期:Transferred零件包装代码:TO-220F
包装说明:FLANGE MOUNT, R-PSFM-T3针数:3
Reach Compliance Code:not_compliantECCN代码:EAR99
HTS代码:8541.29.00.95风险等级:3.83
Samacsys Confidence:3Samacsys Status:Released
Samacsys PartID:1948662Samacsys Pin Count:3
Samacsys Part Category:MOSFET (N-Channel)Samacsys Package Category:Transistor Outline, Vertical
Samacsys Footprint Name:FDPF7N60NZSamacsys Released Date:2019-03-29 16:39:48
Is Samacsys:N雪崩能效等级(Eas):275 mJ
外壳连接:ISOLATED配置:SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压:600 V最大漏极电流 (Abs) (ID):6.5 A
最大漏极电流 (ID):6.5 A最大漏源导通电阻:1.25 Ω
FET 技术:METAL-OXIDE SEMICONDUCTORJEDEC-95代码:TO-220AB
JESD-30 代码:R-PSFM-T3JESD-609代码:e3
元件数量:1端子数量:3
工作模式:ENHANCEMENT MODE最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:FLANGE MOUNT峰值回流温度(摄氏度):NOT SPECIFIED
极性/信道类型:N-CHANNEL最大功率耗散 (Abs):33 W
最大脉冲漏极电流 (IDM):26 A认证状态:Not Qualified
子类别:FET General Purpose Power表面贴装:NO
端子面层:Matte Tin (Sn)端子形式:THROUGH-HOLE
端子位置:SINGLE处于峰值回流温度下的最长时间:NOT SPECIFIED
晶体管应用:SWITCHING晶体管元件材料:SILICON
Base Number Matches:1

FDPF7N60NZ 数据手册

 浏览型号FDPF7N60NZ的Datasheet PDF文件第2页浏览型号FDPF7N60NZ的Datasheet PDF文件第3页浏览型号FDPF7N60NZ的Datasheet PDF文件第4页浏览型号FDPF7N60NZ的Datasheet PDF文件第5页浏览型号FDPF7N60NZ的Datasheet PDF文件第6页浏览型号FDPF7N60NZ的Datasheet PDF文件第7页 
September 2010  
UniFET-II TM  
FDP7N60NZ / FDPF7N60NZ  
N-Channel MOSFET  
600V, 6.5A, 1.25  
Features  
Description  
RDS(on) = 1.05( Typ.)@ VGS = 10V, ID = 3.25A  
Low gate charge ( Typ. 13nC)  
Low Crss ( Typ. 7pF)  
These N-Channel enhancement mode power field effect transis-  
tors are produced using Fairchild’s proprietary, planar stripe,  
DOMS technology.  
This advance technology has been especially tailored to mini-  
mize on-state resistance, provide superior switching perfor-  
mance, and withstand high energy pulse in the avalanche and  
commutationmode. These devices are well suited for high effi-  
cient switched mode power supplies and active power factor cor-  
rection.  
Fast switching  
100% avalanche tested  
Improved dv/dt capability  
ESD Improved capability  
RoHS compliant  
TO-220F  
FDPF Series  
(potted)  
TO-220  
FDP Series  
G D S  
G D S  
MOSFET Maximum Ratings TC = 25oC unless otherwise noted*  
FDPF7N60NZ  
600  
Symbol  
VDSS  
VGSS  
Parameter  
FDP7N60NZ  
Units  
Drain to Source Voltage  
Gate to Source Voltage  
V
V
±30  
-Continuous (TC = 25oC)  
-Continuous (TC = 100oC)  
- Pulsed  
6.5  
3.9  
26  
6.5*  
3.9*  
26*  
ID  
Drain Current  
A
IDM  
Drain Current  
(Note 1)  
(Note 2)  
(Note 1)  
(Note 1)  
(Note 3)  
A
mJ  
A
EAS  
IAR  
Single Pulsed Avalanche Energy  
Avalanche Current  
275  
6.5  
EAR  
dv/dt  
Repetitive Avalanche Energy  
Peak Diode Recovery dv/dt  
14.7  
10  
mJ  
V/ns  
W
W/oC  
oC  
(TC = 25oC)  
- Derate above 25oC  
147  
1.2  
33  
PD  
Power Dissipation  
0.26  
TJ, TSTG  
TL  
Operating and Storage Temperature Range  
-55 to +150  
300  
Maximum Lead Temperature for Soldering Purpose,  
1/8” from Case for 5 Seconds  
oC  
*Drain current limited by maximum junction temperature  
Thermal Characteristics  
Symbol  
RJC  
Parameter  
FDP7N60NZ FDPF7N60NZ  
Units  
Thermal Resistance, Junction to Case  
Thermal Resistance, Case to Sink Typ.  
Thermal Resistance, Junction to Ambient  
0.85  
0.5  
3.8  
-
RCS  
RJA  
oC/W  
62.5  
62.5  
©2010 Fairchild Semiconductor Corporation  
FDP7N60NZ / FDPF7N60NZ Rev. A  
1
www.fairchildsemi.com  

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