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FDPF320N06L PDF预览

FDPF320N06L

更新时间: 2024-11-23 11:59:23
品牌 Logo 应用领域
飞兆/仙童 - FAIRCHILD 晶体晶体管功率场效应晶体管开关脉冲局域网
页数 文件大小 规格书
8页 225K
描述
N-Channel PowerTrench® MOSFET 60V, 21A, 25mΩ

FDPF320N06L 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Transferred零件包装代码:TO-220F
包装说明:ROHS COMPLIANT, SC-91A, TO-220F, 3 PIN针数:3
Reach Compliance Code:not_compliantECCN代码:EAR99
HTS代码:8541.29.00.95风险等级:5.73
Is Samacsys:N雪崩能效等级(Eas):66 mJ
外壳连接:ISOLATED配置:SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压:60 V最大漏极电流 (Abs) (ID):21 A
最大漏极电流 (ID):21 A最大漏源导通电阻:0.025 Ω
FET 技术:METAL-OXIDE SEMICONDUCTORJEDEC-95代码:TO-220AB
JESD-30 代码:R-PSFM-T3JESD-609代码:e3
元件数量:1端子数量:3
工作模式:ENHANCEMENT MODE最高工作温度:175 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:FLANGE MOUNT峰值回流温度(摄氏度):NOT SPECIFIED
极性/信道类型:N-CHANNEL最大功率耗散 (Abs):26 W
最大脉冲漏极电流 (IDM):84 A认证状态:Not Qualified
子类别:FET General Purpose Power表面贴装:NO
端子面层:Matte Tin (Sn)端子形式:THROUGH-HOLE
端子位置:SINGLE处于峰值回流温度下的最长时间:NOT SPECIFIED
晶体管应用:SWITCHING晶体管元件材料:SILICON
Base Number Matches:1

FDPF320N06L 数据手册

 浏览型号FDPF320N06L的Datasheet PDF文件第2页浏览型号FDPF320N06L的Datasheet PDF文件第3页浏览型号FDPF320N06L的Datasheet PDF文件第4页浏览型号FDPF320N06L的Datasheet PDF文件第5页浏览型号FDPF320N06L的Datasheet PDF文件第6页浏览型号FDPF320N06L的Datasheet PDF文件第7页 
December 2010  
FDPF320N06L  
N-Channel PowerTrench® MOSFET  
60V, 21A, 25mΩ  
Features  
Description  
RDS(on) = 20mΩ ( Typ.)@ VGS = 10V, ID = 21A  
This N-Channel MOSFET is produced using Fairchild  
Semiconductor’s advance PowerTrench process that has been  
especially tailored to minimize the on-state resistance and yet  
maintain superior switching performance.  
R
DS(on) = 23mΩ ( Typ.)@ VGS = 5V, ID = 17A  
Low Gate Charge ( Typ. 23.2nC)  
Low Crss ( Typ. 64pF)  
Fast Switching  
Application  
100% Avalanche Tested  
Improved dv/dt Capability  
DC to DC converters / Synchronous Rectification  
RoHS Compliant  
D
G
TO-220F  
(Retractable)  
G C E  
S
MOSFET Maximum Ratings TC = 25oC unless otherwise noted*  
Symbol  
VDSS  
VGSS  
Parameter  
FDPF320N06L  
Units  
Drain to Source Voltage  
Gate to Source Voltage  
60  
V
V
±20  
- Continuous (TC = 25oC)  
- Continuous (TC = 100oC)  
- Pulsed  
21  
ID  
Drain Current  
A
15  
IDM  
Drain Current  
(Note 1)  
(Note 2)  
(Note 3)  
84  
66  
A
mJ  
EAS  
dv/dt  
Single Pulsed Avalanche Energy  
Peak Diode Recovery dv/dt  
6.0  
V/ns  
W
W/oC  
oC  
(TC = 25oC)  
- Derate above 25oC  
26  
PD  
Power Dissipation  
0.17  
TJ, TSTG  
TL  
Operating and Storage Temperature Range  
-55 to +175  
Maximum Lead Temperature for Soldering Purpose,  
1/8” from Case for 5 Seconds  
300  
oC  
*Drain current limited by maximum junction temperature  
Thermal Characteristics  
Symbol  
Parameter  
Thermal Resistance, Junction to Case  
Thermal Resistance, Junction to Ambient  
Units  
FDPF320N06L  
RθJC  
RθJA  
5.8  
oC/W  
62.5  
©2010 Fairchild Semiconductor Corporation  
FDPF320N06L Rev. A4  
1
www.fairchildsemi.com  

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