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FDPF2710T

更新时间： 2024-11-24 11:12:19
品牌 Logo 应用领域
安森美 - ONSEMI 局域网开关脉冲晶体管
页数 文件大小 规格书
10页 1027K
描述
N 沟道，PowerTrench® MOSFET，250V，25A，42.5mΩ

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FDPF2710T 技术参数

是否无铅：不含铅生命周期：Active
包装说明：FLANGE MOUNT, R-PSFM-T3Reach Compliance Code：not_compliant
ECCN代码：EAR99HTS代码：8541.29.00.95
Factory Lead Time：1 week风险等级：0.97
Is Samacsys：N雪崩能效等级（Eas）：145 mJ
外壳连接：ISOLATED配置：SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压：250 V最大漏极电流 (Abs) (ID)：25 A
最大漏极电流 (ID)：25 A最大漏源导通电阻：0.0425 Ω
FET 技术：METAL-OXIDE SEMICONDUCTORJEDEC-95代码：TO-220AB
JESD-30 代码：R-PSFM-T3JESD-609代码：e3
元件数量：1端子数量：3
工作模式：ENHANCEMENT MODE最高工作温度：150 °C
封装主体材料：PLASTIC/EPOXY封装形状：RECTANGULAR
封装形式：FLANGE MOUNT峰值回流温度（摄氏度）：NOT SPECIFIED
极性/信道类型：N-CHANNEL最大功率耗散 (Abs)：62.5 W
最大脉冲漏极电流 (IDM)：100 A认证状态：Not Qualified
子类别：FET General Purpose Power表面贴装：NO
端子面层：Tin (Sn)端子形式：THROUGH-HOLE
端子位置：SINGLE处于峰值回流温度下的最长时间：NOT SPECIFIED
晶体管应用：SWITCHING晶体管元件材料：SILICON
Base Number Matches：1

FDPF2710T 数据手册

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Please note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers  
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device numbers with an underscore (_). Please check the ON Semiconductor website to verify the updated  
device numbers. The most current and up-to-date ordering information can be found at www.onsemi.com. Please  
email any questions regarding the system integration to Fairchild_questions@onsemi.com.  
ON Semiconductor and the ON Semiconductor logo are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number  
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FDPF33N25T FAIRCHILD

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 		N-Channel MOSFET
FDPF33N25T ONSEMI

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 		功率 MOSFET，N 沟道，UniFETTM，250 V，33 A，94 mΩ，TO-2
FDPF33N25TRDTU FAIRCHILD

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 		Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET
FDPF33N25TRDTU ONSEMI

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FDPF3860T FAIRCHILD

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 		N-Channel PowerTrench㈢ MOSFET 100V, 20A, 38.2
FDPF3860T ONSEMI

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 		N 沟道，PowerTrench® MOSFET，100V，20A，38.2mΩ

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