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FDP2710

更新时间: 2024-11-26 03:36:27
品牌 Logo 应用领域
飞兆/仙童 - FAIRCHILD /
页数 文件大小 规格书
8页 685K
描述
250V N-Channel PowerTrench MOSFET

FDP2710 数据手册

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November 2007  
FDP2710  
tm  
250V N-Channel PowerTrench MOSFET  
General Description  
Description  
This N-Channel MOSFET is produced using Fairchild Semicon-  
ductor’s advanced PowerTrench process that has been espe-  
cially tailored to minimize the on-state resistance and yet  
maintain superior switching performance.  
50A, 250V, RDS(on) = 36.3mΩ @VGS = 10 V  
Fast switching speed  
Low gate charge  
High performance trench technology for extremely low RDS(on)  
High power and current handling capability  
RoHS compliant  
Application  
PDP application  
D
G
TO-220  
G
D S  
S
Absolute Maximum Ratings  
Symbol  
Parameter  
Ratings  
250  
Unit  
VDS  
VGS  
ID  
Drain-Source Voltage  
Gate-Source voltage  
Drain Current  
V
V
± 30  
- Continuous (TC = 25°C)  
- Continuous (TC = 100°C)  
50  
31.3  
A
A
(Note 1)  
(Note 2)  
(Note 3)  
IDM  
Drain Current  
- Pulsed  
A
See Figure 9  
EAS  
dv/dt  
PD  
Single Pulsed Avalanche Energy  
Peak Diode Recovery dv/dt  
145  
4.5  
mJ  
V/ns  
Power Dissipation  
(TC = 25°C)  
- Derate above 25°C  
260  
2.1  
W
W/°C  
T
J, TSTG  
Operating and Storage Temperature Range  
-55 to +150  
300  
°C  
TL  
Maximum Lead Temperature for Soldering Purpose,  
1/8” from Case for 5 Seconds  
°C  
Thermal Characteristics  
Symbol  
Parameter  
Min  
Max  
0.48  
62.5  
Unit  
°C/W  
°C/W  
RθJC  
RθJA  
Thermal Resistance, Junction-to-Case  
Thermal Resistance, Junction-to-Ambient  
--  
--  
©2007 Fairchild Semiconductor Corporation  
FDP2710 Rev. A  
1
www.fairchildsemi.com  

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