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FDMS8020 PDF预览

FDMS8020

更新时间： 2024-11-10 11:13:39
品牌 Logo 应用领域
安森美 - ONSEMI 开关脉冲光电二极管晶体管
页数 文件大小 规格书
8页 400K
描述
N 沟道，PowerTrench® MOSFET，30V，131A，2.5mΩ

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中文翻译

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FDMS8020 技术参数

是否无铅： 不含铅生命周期：Active
包装说明：SMALL OUTLINE, R-PDSO-F5Reach Compliance Code：not_compliant
ECCN代码：EAR99HTS代码：8541.29.00.95
Factory Lead Time：18 weeks风险等级：0.98
雪崩能效等级（Eas）：93 mJ外壳连接：DRAIN
配置：SINGLE WITH BUILT-IN DIODE最小漏源击穿电压：30 V
最大漏极电流 (Abs) (ID)：42 A最大漏极电流 (ID)：26 A
最大漏源导通电阻：0.0025 ΩFET 技术：METAL-OXIDE SEMICONDUCTOR
JEDEC-95代码：MO-240AAJESD-30 代码：R-PDSO-F5
JESD-609代码：e3湿度敏感等级：1
元件数量：1端子数量：5
工作模式：ENHANCEMENT MODE最高工作温度：150 °C
封装主体材料：PLASTIC/EPOXY封装形状：RECTANGULAR
封装形式：SMALL OUTLINE峰值回流温度（摄氏度）：260
极性/信道类型：N-CHANNEL最大功率耗散 (Abs)：65 W
最大脉冲漏极电流 (IDM)：150 A子类别：FET General Purpose Power
表面贴装：YES端子面层：Tin (Sn)
端子形式：FLAT端子位置：DUAL
处于峰值回流温度下的最长时间：30晶体管应用：SWITCHING
晶体管元件材料：SILICONBase Number Matches：1

FDMS8020 数据手册

 浏览型号FDMS8020的Datasheet PDF文件第2页浏览型号FDMS8020的Datasheet PDF文件第3页浏览型号FDMS8020的Datasheet PDF文件第4页浏览型号FDMS8020的Datasheet PDF文件第5页浏览型号FDMS8020的Datasheet PDF文件第6页浏览型号FDMS8020的Datasheet PDF文件第7页 
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 		Power Field-Effect Transistor, 26A I(D), 30V, 0.0024ohm, 1-Element, N-Channel, Silicon, Me
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 		N 沟道，PowerTrench® SyncFET™，30V，49A，2.4mΩ
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 		30V N沟道PowerTrench® SyncFET™
FDMS8027S FAIRCHILD

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 		N-Channel PowerTrench® SyncFETTM 30 V, 22 A,
FDMS8027S ONSEMI

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 		N 沟道，PowerTrench® SyncFET™，30V，22A，5.0mΩ
FDMS8050 ONSEMI

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 		N 沟道，PowerTrench® MOSFET，30V，200A，0.65mΩ
FDMS8050ET30 ONSEMI

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 		N 沟道 PowerTrench® MOSFET 30V，423A，0.65mΩ
FDMS8090 FAIRCHILD

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 		PowerTrench® Power Stage 100 V Symmetric Dua

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