Datasheet > FDM84100

FDM84100

更新时间： 2024-02-22 00:13:32

品牌	Logo	应用领域
安森美 - ONSEMI		/
页数	文件大小	规格书
7页	234K
描述
Power Field-Effect Transistor

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技术参数
数据手册

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FDM84100 技术参数

生命周期：	Transferred	包装说明：	,
Reach Compliance Code：	compliant	风险等级：	5.76
Base Number Matches：	1

FDM84100 数据手册

January 2014

FDMD84100

Dual N-Channel PowerTrench^®MOSFET

100 V, 21 A, 20 mΩ

Features

General Description

Max r_DS(on)= 20 mΩ at V_GS= 10 V, I_D= 7 A

Max r_DS(on)= 32 mΩ at V_GS= 6 V, I_D= 5.5 A

This package integrates two N-Channel devices connected

internally in common-source configuration. This enables very

low package parasitics and optimized thermal path to the

common source pad on the bottom. Provides a very small

footprint (3.3 x 5 mm) for higher power density.

Ideal for flexible layout in secondary side synchronous

rectification

Termination is Lead-free and RoHS Compliant

100% UIL tested

Applications

Isolated DC-DC Synchronous Rectifiers

Common Ground Load Switches

Bottom

Top

Pin 1

S1/S2

S1,S2 to backside

Pin 1

Power 3.3 x 5

MOSFET Maximum Ratings T_A= 25 °C unless otherwise noted

Symbol

V_DS

V_GS

Parameter

Ratings

Units

Drain to Source Voltage

Gate to Source Voltage

Drain Current -Continuous

-Continuous

100

±20

T_C= 25 °C

T_A= 25 °C

I_D

(Note 1a)

(Note 4)

(Note 3)

-Pulsed

E_AS

Single Pulse Avalanche Energy

Power Dissipation

121

T_C= 25 °C

T_A= 25 °C

P_D

Power Dissipation

(Note 1a)

2.1

T_J, T_STG

Operating and Storage Junction Temperature Range

-55 to +150

°C

Thermal Characteristics

R_θJC

R_θJA

Thermal Resistance, Junction to Case

Thermal Resistance, Junction to Ambient

5.3

°C/W

(Note 1a)

Package Marking and Ordering Information

Device Marking

Device

Package

Reel Size

13 ’’

Tape Width

Quantity

FDMD84100

Power 3.3 x 5

12 mm

3000 units

FDMD84100 Rev.C

www.fairchildsemi.com

12 3 4 5 6 7

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