Datasheet > FDD5N50TM-WS

FDD5N50TM-WS

更新时间： 2024-11-19 11:15:35

品牌	Logo	应用领域
安森美 - ONSEMI		开关脉冲晶体管
页数	文件大小	规格书
9页	926K
描述
功率 MOSFET，N 沟道，UniFETTM，500 V，4 A，1.4 Ω，DPAK

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FDD5N50TM-WS 技术参数

是否无铅：	不含铅	生命周期：	Active
包装说明：	SMALL OUTLINE, R-PSSO-G2	Reach Compliance Code：	not_compliant
风险等级：	1.29	雪崩能效等级（Eas）：	256 mJ
外壳连接：	DRAIN	配置：	SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压：	500 V	最大漏极电流 (Abs) (ID)：	4 A
最大漏极电流 (ID)：	4 A	最大漏源导通电阻：	1.4 Ω
FET 技术：	METAL-OXIDE SEMICONDUCTOR	JEDEC-95代码：	TO-252AA
JESD-30 代码：	R-PSSO-G2	JESD-609代码：	e3
湿度敏感等级：	1	元件数量：	1
端子数量：	2	工作模式：	ENHANCEMENT MODE
最高工作温度：	150 °C	封装主体材料：	PLASTIC/EPOXY
封装形状：	RECTANGULAR	封装形式：	SMALL OUTLINE
峰值回流温度（摄氏度）：	NOT SPECIFIED	极性/信道类型：	N-CHANNEL
最大功率耗散 (Abs)：	40 W	最大脉冲漏极电流 (IDM)：	16 A
子类别：	FET General Purpose Power	表面贴装：	YES
端子面层：	Tin (Sn)	端子形式：	GULL WING
端子位置：	SINGLE	处于峰值回流温度下的最长时间：	NOT SPECIFIED
晶体管应用：	SWITCHING	晶体管元件材料：	SILICON
Base Number Matches：	1

FDD5N50TM-WS 数据手册

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To learn more about onsemi™, please visit our website at

www.onsemi.com

onsemi andꢀꢀꢀꢀꢀꢀꢀand other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba “onsemi” or its affiliates and/or

subsidiaries in the United States and/or other countries. onsemi owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of onsemi

product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. onsemi reserves the right to make changes at any time to any products or information herein, without

notice. The information herein is provided “as-is” and onsemi makes no warranty, representation or guarantee regarding the accuracy of the information, product features, availability, functionality,

or suitability of its products for any particular purpose, nor does onsemi assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all

liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using onsemi products, including compliance with all laws,

regulations and safety requirements or standards, regardless of any support or applications information provided by onsemi. “Typical” parameters which may be provided in onsemi data sheets and/

or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application

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associated with such unintended or unauthorized use, even if such claim alleges that onsemi was negligent regarding the design or manufacture of the part. onsemi is an Equal Opportunity/Affirmative

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与FDD5N50TM-WS相关器件

型号	品牌	获取价格	描述	数据表
FDD5N50U	FAIRCHILD	获取价格	N-Channel MOSFET, FRFET 500V, 3A, 2.0ヘ
FDD5N50UTM-WS	ONSEMI	获取价格	UniFETTM Ultra FRFETTM MOSFET，N 沟道，500 V，3 A，
FDD5N53	FAIRCHILD	获取价格	N-Channel MOSFET 530V, 4A, 1.5Ω
FDD5N53TF	FAIRCHILD	获取价格	N-Channel MOSFET 530V, 4A, 1.5Ω
FDD5N53TM	FAIRCHILD	获取价格	N-Channel MOSFET 530V, 4A, 1.5Ω
FDD5N60NZ	FAIRCHILD	获取价格	N-Channel UniFET II MOSFET 600 V, 4.0 A, 2 Ohm
FDD5N60NZTM	FAIRCHILD	获取价格	N-Channel UniFET II MOSFET 600 V, 4.0 A, 2 Ohm
FDD5N60NZTM	ONSEMI	获取价格	功率 MOSFET，N 沟道，UniFETTM II，600V，4A，2Ω，DPAK
FDD6030	FAIRCHILD	获取价格	N-Channel PowerTrenchTM MOSFET
FDD6030BL	FAIRCHILD	获取价格	30V N-Channel PowerTrench MOSFET

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